Datasheet > TIC126D-S

TIC126D-S

更新时间： 2024-10-02 20:09:03

品牌	Logo	应用领域
伯恩斯 - BOURNS		栅栅极
页数	文件大小	规格书
4页	161K
描述
Silicon Controlled Rectifier, 7500mA I(T), 400V V(DRM)

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

TIC126D-S 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.62	最大直流栅极触发电流：	20 mA
最大直流栅极触发电压：	1.5 V	最大维持电流：	40 mA
最大漏电流：	2 mA	通态非重复峰值电流：	100 A
最大通态电流：	7500 A	最高工作温度：	110 °C
最低工作温度：	-40 °C	断态重复峰值电压：	400 V
子类别：	Silicon Controlled Rectifiers	表面贴装：	NO
触发设备类型：	SCR	Base Number Matches：	1

TIC126D-S 数据手册

TIC126 SERIES

SILICON CONTROLLED RECTIFIERS

12 A Continuous On-State Current

100 A Surge-Current

TO-220 PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Max I of 20 mA

This series is obsolete and

not recommended for new designs.

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

400

600

700

800

400

600

700

800

UNIT

TIC126D

TIC126M

TIC126S

TIC126N

TIC126D

TIC126M

TIC126S

TIC126N

Repetitive peak off-state voltage

Repetitive peak reverse voltage

V_DRM

V_RRM

Continuous on-state current at (or below) 70°C case temperature (see Note 1)

I_T(RMS)

I_T(AV)

Average on-state current (180° conduction angle) at (or below) 70°C case temperature

(see Note 2)

7.5

Surge on-state current at (or below) 25°C case temperature (see Note 3)

Peak positive gate current (pulse width ≤ 300 µs)

Peak gate power dissipation (pulse width ≤ 300 µs)

Average gate power dissipation (see Note 4)

Operating case temperature range

I_TM

I_GM

100

P_GM

P_G(AV)

T_C

°C

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

T_L

Lead temperature 1.6 mm from case for 10 seconds

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.

2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate

linearly to zero at 110°C.

3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

4. This value applies for a maximum averaging time of 20 ms.

APRIL 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4

中文翻译

下载PDF

TIC126D-S 替代型号

型号	品牌	替代类型	描述	数据表
MCR72-6G	ONSEMI	功能相似	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

与TIC126D-S相关器件

型号	品牌	获取价格	描述	数据表
TIC126E	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC126M	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC126M	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC126M	TI	获取价格	12A, 600V, SCR
TIC126M	NJSEMI	获取价格	Thyristor SCR 600V 100A 3-Pin(3+Tab) TO-220
TIC126M-S	BOURNS	获取价格	TIC126 SERIES SILICON CONTROLLED RECTIFIERS
TIC126N	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC126N	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC126N	NJSEMI	获取价格	Thyristor SCR 800V 100A 3-Pin(3+Tab) TO-220
TIC126N-S	BOURNS	获取价格	Silicon Controlled Rectifier, 7500mA I(T), 800V V(DRM)

与TIC126D-S相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

TIC126D-S

TIC126D-S 技术参数

TIC126D-S 数据手册

TIC126D-S 替代型号

与TIC126D-S相关器件

与TIC126D-S相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TIC126D-S

TIC126D-S 技术参数

TIC126D-S 数据手册

TIC126D-S 替代型号

与TIC126D-S相关器件

与TIC126D-S相关文章

您还可以找

您在本页遇到什么问题？