Datasheet > TIC116D

TIC116D

更新时间： 2024-11-03 22:19:43

品牌	Logo	应用领域
POINN		可控硅整流器
页数	文件大小	规格书
6页	114K
描述
SILICON CONTROLLED RECTIFIERS

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中文翻译

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技术参数
数据手册

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TIC116D 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.30.00.80	风险等级：	5.66
Is Samacsys：	N	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	触发设备类型：	SCR
Base Number Matches：	1

TIC116D 数据手册

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

8 A Continuous On-State Current

80 A Surge-Current

TO-220 PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Max I of 20 mA

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

400

600

700

800

400

600

700

800

UNIT

TIC116D

TIC116M

TIC116S

TIC116N

TIC116D

TIC116M

TIC116S

TIC116N

Repetitive peak off-state voltage

Repetitive peak reverse voltage

V_DRM

V_RRM

Continuous on-state current at (or below) 70°C case temperature (see Note 1)

I_T(RMS)

I_T(AV)

Average on-state current (180° conduction angle) at (or below) 70°C case temperature

(see Note 2)

Surge on-state current at (or below) 25°C case temperature (see Note 3)

Peak positive gate current (pulse width £ 300 ms)

Peak gate power dissipation (pulse width £ 300 ms)

Average gate power dissipation (see Note 4)

Operating case temperature range

I_TM

I_GM

P_GM

P_G(AV)

T_C

°C

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

T_L

Lead temperature 1.6 mm from case for 10 seconds

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.

2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate

linearly to zero at 110°C.

3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

4. This value applies for a maximum averaging time of 20 ms.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

中文翻译

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与TIC116D相关器件

型号	品牌	获取价格	描述	数据表
TIC116D-S	BOURNS	获取价格	Silicon Controlled Rectifier, 5000mA I(T), 400V V(DRM)
TIC116E	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC116E	TI	获取价格	暂无描述
TIC116E	NJSEMI	获取价格	Thyristor SCR 600V 80A 3-Pin(3+Tab) TO-220
TIC116F	TI	获取价格	8A, 50V, SCR
TIC116F	NJSEMI	获取价格	Thyristor SCR 600V 80A 3-Pin(3+Tab) TO-220
TIC116M	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC116M	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC116M	TI	获取价格	8A, 600V, SCR
TIC116M	NJSEMI	获取价格	Thyristor SCR 600V 80A 3-Pin(3+Tab) TO-220

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