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TIC116E PDF预览

TIC116E

更新时间: 2024-11-27 06:02:07
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描述
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

TIC116E 数据手册

 浏览型号TIC116E的Datasheet PDF文件第2页浏览型号TIC116E的Datasheet PDF文件第3页 
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,  
TIC116N, TIC116S  
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS  
8 A Continuous On-State Current  
80 A Surge-Current  
Glass Passivated Wafer  
100 V to 800 V Off-State Voltage  
Max IGT of 20 mA  
Compliance to ROHS  
ABSOLUTE MAXIMUM RATINGS  
Value  
Symbol  
Ratings  
Unit  
A
B
C
D
E
M
S
N
Repetitive peak off-state voltage  
(see Note1)  
VDRM  
VRRM  
IT(RMS)  
100 200 300 400 500 600 700 800  
V
V
A
Repetitive peak reverse voltage  
Continuous on-state current at (or below)  
70°C case temperature (see note2)  
Average on-state current (180° conduction  
angle) at(or below) 70°C case temperature  
(see Note3)  
100 200 300 400 500 600 700 800  
8
5
IT(AV)  
A
Surge on-state current (see Note4)  
Peak positive gate current (pulse width  
300 µs)  
80  
3
ITM  
IGM  
A
A
Peak power dissipation (pulse width 300  
µs)  
Average gate power dissipation (see  
Note5)  
5
1
PGM  
W
W
PG(AV)  
Operating case temperature range  
-40 to +110  
-40 to +125  
TC  
Tstg  
°C  
°C  
Storage temperature range  
Lead temperature 1.6 mm from case for 10  
seconds  
230  
TL  
°C  
Notes:  
1. These values apply when the gate-cathode resistance RGK = 1k  
2. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to  
zero at 110°C.  
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with  
resistive load. Above 70°C derate linearly to zero at 110°C.  
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated  
value of peak reverse voltage and on-state current. Surge may be repeated after the device has  
returned to original thermal equilibrium.  
5. This value applies for a maximum averaging time of 20 ms.  
Page 1 of 3  

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