Datasheet > TIC108M-S

TIC108M-S

更新时间： 2024-11-27 15:54:19

品牌	Logo	应用领域
伯恩斯 - BOURNS		栅栅极
页数	文件大小	规格书
4页	160K
描述
Silicon Controlled Rectifier, 3200mA I(T), 600V V(DRM)

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中文翻译

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技术参数
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TIC108M-S 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.66
最大直流栅极触发电流：	1 mA	最大直流栅极触发电压：	1 V
最大维持电流：	10 mA	最大漏电流：	0.4 mA
通态非重复峰值电流：	20 A	最大通态电流：	3200 A
最高工作温度：	110 °C	最低工作温度：	-40 °C
断态重复峰值电压：	600 V	子类别：	Silicon Controlled Rectifiers
表面贴装：	NO	触发设备类型：	SCR
Base Number Matches：	1

TIC108M-S 数据手册

TIC108 SERIES

SILICON CONTROLLED RECTIFIERS

5 A Continuous On-State Current

20 A Surge-Current

TO-220 PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Max I of 1 mA

This series is obsolete and

not recommended for new designs.

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIC108D

TIC108M

TIC108S

TIC108N

TIC108D

TIC108M

TIC108S

TIC108N

400

600

700

800

400

600

700

800

Repetitive peak off-state voltage (see Note 1)

V_DRM

Repetitive peak reverse voltage

V_RRM

Continuous on-state current at (or below) 80°C case temperature (see Note 2)

I_T(RMS)

I_T(AV)

Average on-state current (180° conduction angle) at (or below) 80°C case temperature

(see Note 3)

3.2

Surge on-state current (see Note 4)

I_TSM

I_GM

0.2

Peak positive gate current (pulse width ≤ 300 µs)

Peak gate power dissipation (pulse width ≤ 300 µs)

Average gate power dissipation (see Note 5)

Operating case temperature range

P_GM

P_G(AV)

T_C

1.3

°C

0.3

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

T_L

Lead temperature 1.6 mm from case for 10 seconds

NOTES: 1. These values apply when the gate-cathode resistance R_GK= 1 kΩ.

2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.

3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate

linearly to zero at 110°C.

4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

5. This value applies for a maximum averaging time of 20 ms.

APRIL 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4

中文翻译

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与TIC108M-S相关器件

型号	品牌	获取价格	描述	数据表
TIC108N	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC108N	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC108S	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC108S	COMSET	获取价格	Silicon Controlled Rectifier
TIC116	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC116	NJSEMI	获取价格	Thyristor SCR 600V 80A 3-Pin(3+Tab) TO-220
TIC116A	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC116A	TI	获取价格	8A, 100V, SCR
TIC116A	NJSEMI	获取价格	Thyristor SCR 600V 80A 3-Pin(3+Tab) TO-220
TIC116A_12	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

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