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TIC116A_12 PDF预览

TIC116A_12

更新时间: 2024-11-04 12:03:59
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COMSET /
页数 文件大小 规格书
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描述
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

TIC116A_12 数据手册

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TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,  
TIC116N, TIC116S  
P-N-P-N SILICON REVERSE-BLOCKING TRIODE  
THYRISTORS  
8 A Continuous On-State Current  
80 A Surge-Current  
Glass Passivated Wafer  
100 V to 800 V Off-State Voltage  
Max IGT of 20 mA  
Compliance to ROHS  
ABSOLUTE MAXIMUM RATINGS  
Value  
Symbol  
Ratings  
Unit  
A
B
C
D
E
M
S
N
Repetitive peak off-state voltage  
(see Note1)  
Repetitive peak reverse voltage  
Continuous on-state current at  
(or below) 70°C case temperature  
(see note2)  
Average on-state current  
(180° conduction angle) at(or below)  
70°C case temperature (see Note3)  
Surge on-state current (see Note4)  
Peak positive gate current  
(pulse width 300 µs)  
VDRM  
VRRM  
100 200 300 400 500 600 700 800  
100 200 300 400 500 600 700 800  
V
V
IT(RMS)  
8
5
A
A
IT(AV)  
ITM  
IGM  
80  
3
A
A
Peak power dissipation  
(pulse width 300 µs)  
Average gate power dissipation  
(see Note5)  
PGM  
5
1
W
W
PG(AV)  
TC  
Tstg  
Operating case temperature range  
Storage temperature range  
Lead temperature 1.6 mm from case  
for 10 seconds  
-40 to +110  
-40 to +125  
°C  
°C  
TL  
230  
°C  
29/10/2012  
COMSET SEMICONDUCTORS  
1 | 4  

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TIC116C NJSEMI

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Thyristor SCR 600V 80A 3-Pin(3+Tab) TO-220
TIC116D COMSET

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P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC116D POINN

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SILICON CONTROLLED RECTIFIERS
TIC116D TI

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8A, 400V, SCR
TIC116D NJSEMI

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Thyristor SCR 400V 80A 3-Pin(3+Tab) TO-220