Datasheet > TIC108D

TIC108D

更新时间： 2024-11-04 19:58:15

品牌	Logo	应用领域
COMSET		局域网栅栅极
页数	文件大小	规格书
4页	202K
描述
Silicon Controlled Rectifier

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中文翻译

获取价格

技术参数
数据手册

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TIC108D 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Is Samacsys：	N	Base Number Matches：	1

TIC108D 数据手册

SEMICONDUCTORS

TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M,

TIC108N, TIC108S

P-N-P-N SILICON REVERSE-BLOCKING TRIODE

THYRISTORS

•

5 A Continuous On-State Current

20 A Surge-Current

Glass Passivated Wafer

100 V to 800 V Off-State Voltage

Max I_GTof 1 mA

Compliance to ROHS

ABSOLUTE MAXIMUM RATINGS

Value

Symbol

Ratings

Unit

Repetitive peak off-state voltage

(see Note1)

Repetitive peak reverse voltage

Continuous on-state current at

(or below) 80°C case temperature (

see note2)

Average on-state current

(180° conduction angle) at(or below)

80°C case temperature (see Note3)

Surge on-state current (see Note4)

Peak positive gate current

(pulse width ≤300 µs)

V_DRM

V_RRM

100 200 300 400 500 600 700 800

I_T(RMS)

I_T(AV)

3.2

I_TM

I_GM

0.2

Peak power dissipation

(pulse width ≤300 µs)

Average gate power dissipation

(see Note5)

P_GM

1.3

0.3

P_G(AV)

T_C

T_stg

Operating case temperature range

Storage temperature range

Lead temperature 1.6 mm from case

for 10 seconds

-40 to +110

-40 to +125

°C

T_L

230

°C

02/10/2012

COMSET SEMICONDUCTORS

1 | 3

12 3 4

中文翻译

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与TIC108D相关器件

型号	品牌	获取价格	描述	数据表
TIC108D-S	BOURNS	获取价格	Silicon Controlled Rectifier, 3200mA I(T), 400V V(DRM)
TIC108E	COMSET	获取价格	Silicon Controlled Rectifier
TIC108M	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC108M	COMSET	获取价格	Silicon Controlled Rectifier
TIC108M-S	BOURNS	获取价格	Silicon Controlled Rectifier, 3200mA I(T), 600V V(DRM)
TIC108N	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC108N	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC108S	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC108S	COMSET	获取价格	Silicon Controlled Rectifier
TIC116	POINN	获取价格	SILICON CONTROLLED RECTIFIERS