Datasheet > TGBLH6601-S8

TGBLH6601-S8

更新时间： 2024-04-09 19:03:00

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
8页	589K
描述
60V, -60V, N+P Channel MOSFETs

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数据手册

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TGBLH6601-S8 数据手册

P＋N-Channel Enhancement Mode MOSFET

TGBLH6601-S8

1.8

1.6

1.4

1.2

V_DS= -5V

-55℃

25℃

V_GS= -10V; I_D= -4A

150℃

V_GS= -4.5V; I_D= -4A

0.8

0.6

-75 -50 -25

25 50 75 100 125 150 175

-V_GS(V)

T_J(℃)

Fig 7 Normalized On-Resistance vs. Junction

Temperature

Fig 8 Transfer Characteristics

10000

f = 1 MHz

V_DS= -30V；I_D= -4A

Ciss

1000

Coss

100

Crss

Qg(nC)

-V_DS(V)

Fig 9 Capacitance Characteristics

Fig 10 Gate-Charge Characteristics

1.2

1.1

1.05

0.9

0.8

0.7

0.6

0.5

0.4

I_D= -250uA

0.95

-75 -50 -25

75 100 125 150 175

-75 -50 -25

25 50 75 100 125 150 175

T_J(℃)

Fig 11 Normalized Breakdown Voltage

vs. Junction Temperature

Fig 12 Normalized V_GS(th)vs. Junction Temperature

MTM0933A: December 2023 [2.0]

www.gmesemi.com

1...4 5 678

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