5秒后页面跳转
TGBLN4406-5DL8 PDF预览

TGBLN4406-5DL8

更新时间: 2024-04-09 19:00:19
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 585K
描述
40V, Dual N Channel MOSFETs

TGBLN4406-5DL8 数据手册

 浏览型号TGBLN4406-5DL8的Datasheet PDF文件第2页浏览型号TGBLN4406-5DL8的Datasheet PDF文件第3页浏览型号TGBLN4406-5DL8的Datasheet PDF文件第4页浏览型号TGBLN4406-5DL8的Datasheet PDF文件第5页浏览型号TGBLN4406-5DL8的Datasheet PDF文件第6页 
Dual N-Channel Enhancement Mode MOSFET  
TGBLN4406-5DL8  
Features  
Advanced shielded-gate technology  
Ultra-low on-resistance and gate-charge  
HBM: AEC-Q101-001: H1B (JESD22-A114-B: 1B)  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: PDFN5×6-8LC  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
PDFN5×6-8LC  
Ordering Information  
Part Number  
Package  
PDFN5×6-8LC  
Shipping Quantity  
Marking Code  
GBLN4406  
TGBLN4406-5DL8  
5000 pcs / Tape & Reel  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
40  
V
V
Gate-to-Source Voltage  
±20  
Continuous Drain Current (TC = 25°C )  
Continuous Drain Current (TC = 100°C )  
Continuous Drain Current (TA = 25°C ) *1  
Continuous Drain Current (TA = 100°C ) *1  
Pulsed Drain Current (tp =10μs, TC = 25°C )  
Single Pulse Avalanche Energy *3  
Power Dissipation (TC = 25°C)  
80  
A
50  
17  
A
ID  
A
11  
A
IDM  
EAS  
PD  
320  
A
125  
mJ  
W
°C  
°C  
50  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
RθJC  
RθJA  
-
-
2.2  
45  
2.5  
50  
°C /W  
°C /W  
MTM1432A: November 2023 [2.0]  
www.gmesemi.com  
1

与TGBLN4406-5DL8相关器件

型号 品牌 描述 获取价格 数据表
TGBLN6601-5DL8 Galaxy Microelectronics 60V, Dual N Channel MOSFETs

获取价格

TGBLN6601-S8 Galaxy Microelectronics 5.7A, 60V, 3.1W, N Channel, Dual MOSFETs

获取价格

TGBLN6602-5DL8 Galaxy Microelectronics 60A, 60V, 50W, N Channel, Dual MOSFETs

获取价格

TGBLN6603-5DL8 Galaxy Microelectronics 34A, 60V, 40W, N Channel, Dual MOSFETs

获取价格

TGBLN6604-5DL8 Galaxy Microelectronics 20A, 60V, 25W, N Channel, Dual MOSFETs

获取价格

TGBLN6606-S8 Galaxy Microelectronics 4A, 60V, 2.5W, N Channel, Dual MOSFETs

获取价格