Datasheet > TGBLN3303-3DL8

TGBLN3303-3DL8

更新时间： 2024-09-24 17:02:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	727K
描述
4.5A, 30V, 1.5W, N Channel, Dual MOSFETs

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数据手册

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TGBLN3303-3DL8 数据手册

Dual-N-Channel Enhancement Mode Power MOSFET

TGBLN3303-3DL8

Features



Super low gate charge

Green device available

Excellent CdV/dt effect decline

Advanced high cell density Trench technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN3×3-8LC

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN3×3-8LC

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TGBLN3303-3DL8

PDFN3×3-8LC

5000 pcs / Tape & Reel

GBLN3303

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

3.8

I_DM

E_AS

°C

P_D

Power Dissipation (T_A= 25°C) ^*1

Operating Junction Temperature Range

Storage Temperature Range

1.5

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

°C /W

MTM1309A: September 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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