Datasheet > TGBLP6601-S8

TGBLP6601-S8

更新时间： 2024-09-24 17:01:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	802K
描述
-60V, Dual P Channel MOSFETs

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中文翻译

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数据手册

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TGBLP6601-S8 数据手册

P-Channel Enhancement Mode MOSFET

TGBLP6601-S8

Features



Advanced trench technology

Low R_DS(ON)

Fast switching speed

HBM: AEC-Q101-001: H1C (JESD22-A114-B: 1C)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Typical Applications



Backlighting

Power management functions

DC-DC Converters

Mechanical Data



Case: SOP-8



Molding Compound, UL Flammability Classification Rating 94V-0

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208

SOP-8

Ordering Information

Part Number

Package

SOP-8

Shipping Quantity

Marking Code

TGBLP6601-S8

4000 pcs / Tape & Reel

GBLP6601

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

-60

Unit

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 100°C ) ^*1

Pulsed Drain Current (t_p=10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*4

Single Pulse Avalanche Current ^*4

Power Dissipation (T_C= 25°C)

-11

-7

I_D

-4.4

-2.8

I_DM

E_AS

I_AS

-32

30.8

-24.8

9.6

°C

Power Dissipation (T_A= 25°C) ^*1

Power Dissipation (T_A= 25°C) ^*2

Operating Junction Temperature Range

Storage Temperature Range

P_D

1.67

1.2

T_J

-55 ~ +150

T_STG

MTM1451A: December 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

中文翻译

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