Datasheet > TGBLN6602-5DL8

TGBLN6602-5DL8

更新时间： 2024-04-09 19:02:52

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	651K
描述
60A, 60V, 50W, N Channel, Dual MOSFETs

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TGBLN6602-5DL8 数据手册

Dual N-Channel Enhancement Mode MOSFET

TGBLN6602-5DL8

Features



Super low gate charge

Green device available

Excellent C_dV/ d_teffect decline

Advanced high cell density trench technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN5×6-8LC

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8LC

Ordering Information

Part Number

Package

PDFN5×6-8LC

Shipping Quantity

Marking Code

TGBLN6602-5DL8

5000 pcs / Tape & Reel

GBLN6602

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current ^*2

I_D

I_DM

100

Single Pulse Avalanche Energy ^*3

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

2.5

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

Operating Junction & Storage Temperature Range

R_θJC

R_θJA

°C /W

°C

T_JT_STG

，

-55 ~ +175

MTM0447A: January 2023 [2.2]

www.gmesemi.com

12 3 4 5

下载PDF

与TGBLN6602-5DL8相关器件

型号	品牌	描述	获取价格	数据表
TGBLN6603-5DL8	Galaxy Microelectronics	34A, 60V, 40W, N Channel, Dual MOSFETs	获取价格
TGBLN6604-5DL8	Galaxy Microelectronics	20A, 60V, 25W, N Channel, Dual MOSFETs	获取价格
TGBLN6606-S8	Galaxy Microelectronics	4A, 60V, 2.5W, N Channel, Dual MOSFETs	获取价格
TGBLNAA02-S8	Galaxy Microelectronics	100V, Dual N Channel MOSFETs	获取价格
TGBLNAA03-5DL8	Galaxy Microelectronics	42A, 100V, 57W, N Channel, Dual MOSFETs	获取价格
TGBLNBB01-5DL8	Galaxy Microelectronics	18A, 150V, 46W, N Channel, Dual MOSFETs	获取价格