Datasheet > TGBLN6603-5DL8

TGBLN6603-5DL8

更新时间： 2024-04-09 19:00:18

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	597K
描述
34A, 60V, 40W, N Channel, Dual MOSFETs

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TGBLN6603-5DL8 数据手册

Dual N-Channel Enhancement Mode MOSFET

TGBLN6603-5DL8

Features



Super low gate charge

Green device available

Excellent C_dV/ d_teffect decline

Advanced high cell density trench technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN5×6-8LC

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8LC

Ordering Information

Part Number

Package

PDFN5×6-8LC

Shipping Quantity

Marking Code

TGBLN6603-5DL8

5000 pcs / Tape & Reel

GBLN6603

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C) ^*1

Continuous Drain Current (T_C= 100°C) ^*1

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current ( tp=10us)

I_D

6.6

160

I_DM

Single Pulse Avalanche Energy ^*3

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C) ^*4

Power Dissipation (T_A= 25°C) ^*4

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Air ^*5

Operating Junction Temperature Range

Storage Temperature Range

P_D

R_θJC

R_θJA

T_J

3.7

°C /W

°C

-55 ~ +175

T_STG

°C

MTM0736A: September 2022 [2.1]

www.gmesemi.com

12 3 4 5

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