Datasheet > TGBLN3303-S8

TGBLN3303-S8

更新时间： 2024-04-09 18:59:24

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	789K
描述
30V, Dual N Channel MOSFETs

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数据手册

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TGBLN3303-S8 数据手册

Dual N-Channel Enhancement Mode MOSFET

TGBLN3303-S8

Features



Lower R_DS(on)

Good stability and uniformity

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOP-8



Molding Compound: UL Flammability Classification

Rating 94V-0

SOP-8



Terminals: Matte tin-plated leads; solderability-per

MIL-STD-202, Method 208

Ordering Information

Part Number

Package

SOP-8

Shipping Quantity

Marking Code

TGBLN3303-S8

4000 pcs / Tape & Reel

GBLN3303

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 100°C ) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C )

Single Pulse Avalanche Energy ^*4

Power Dissipation (T_A= 25°C) ^*1

I_D

3.8

I_DM

E_AS

P_D

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Air ^*2

R_θJC

62.5

°C /W

R_θJA

MTM1391A: September 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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