Datasheet > TGBLN4402-5DL8

TGBLN4402-5DL8

更新时间： 2024-04-09 19:02:38

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	638K
描述
36A, 40V, 47W, N Channel, Dual MOSFETs

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数据手册

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TGBLN4402-5DL8 数据手册

Dual N-Channel Enhancement Mode MOSFET

TGBLN4402-5DL8

Features



Advanced Shielded-Gate Trench technology

Ultra-low on-resistance

Low gate charge

Fast switching speed

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN5×6-8LC

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

PDFN5×6-8LC

Ordering Information

Part Number

Package

PDFN5×6-8LC

Shipping Quantity

Marking Code

GBLN4402

TGBLN4402-5DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p=10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

I_D

172

I_DM

E_AS

°C

Power Dissipation (T_C= 25°C, per device)

Power Dissipation (T_C= 25°C, per chip)

Operating Junction Temperature Range

Storage Temperature Range

P_D

T_J

-55 ~ +175

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

5.3

°C /W

MTM0705A: March 2024 [2.3]

www.gmesemi.com

12 3 4 5

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