Datasheet > TGBLH6601-S8

TGBLH6601-S8

更新时间： 2024-04-09 19:03:00

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
8页	589K
描述
60V, -60V, N+P Channel MOSFETs

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TGBLH6601-S8 数据手册

P＋N-Channel Enhancement Mode MOSFET

TGBLH6601-S8

Electrical Characteristics-P (@ T_A= 25°C unless otherwise specified)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= -250μA

V_DS= -60V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

-60

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

-1

μA

±1 00

On Characteristics

R_DS(ON)

Static Drain-Source On-resistance ^*3

V_GS= -10V, I_D= -4A

V_GS= -4.5V, I_D= -4A

V_DS= V_GS, I_D= -250μA

135

-3

mΩ

100

-1.6

V_GS(th)

Gate Threshold Voltage

-1

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

Input Capacitance

930

V_GS= 0V

Output Capacitance

V_DS= -30V

f = 1.0MHz

Reverse Transfer Capacitance

Switching Characteristics

t_d(ON)

t_r

t_d(OFF)

t_f

Turn-on Delay Time ^*5

Turn-on Rise Time ^*5

Turn-Off Delay Time ^*5

Turn-Off Fall Time ^*5

Total Gate-Charge

V_DD= -30V

V_GS= -10V

R_G= 3Ω

R_L= 7.5Ω

Q_G

3.1

3.2

V_GS= -10V

V_DD= -30V

I_D= -4A

Q_GS

Q_GD

Gate to Source Charge

Gate to Drain (Miller) Charge

Source-Drain Diode Characteristics

V_SD

trr

Diode Forward Voltage ^*3

Reverse Recovery Time

Reverse Recovery Charge

I_SD= -1A, V_GS= 0V

-0.7

-1.2

I_F= -4A, V_GS= 0V

d_I/d_t= 100A/μs

Qrr

Notes:

1. The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

2. The data tested by surface mounted on a minimum recommended FR-4 board

3. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%

4. The E_ASdata shows Max. rating. The test condition is N: V_DD= 30V, V_GS= 10V, L = 0.5mH

P: V_DD= -30V, V_GS= -10V, L = 0.5mH

5. Guaranteed by design, not subject to production

MTM0933A: December 2023 [2.0]

www.gmesemi.com

1 234 5 6 7 8

下载PDF

与TGBLH6601-S8相关器件

型号	品牌	描述	获取价格	数据表
TGBLN3301-S8	Galaxy Microelectronics	7.5A, 30V, 1.6W, N Channel, Dual MOSFETs	获取价格
TGBLN3302-S8	Galaxy Microelectronics	30V, Dual N Channel MOSFETs	获取价格
TGBLN3303-3DL8	Galaxy Microelectronics	4.5A, 30V, 1.5W, N Channel, Dual MOSFETs	获取价格
TGBLN3303-S8	Galaxy Microelectronics	30V, Dual N Channel MOSFETs	获取价格
TGBLN4401-5DL8	Galaxy Microelectronics	48A, 40V, 31W, N Channel, Dual MOSFETs	获取价格
TGBLN4402-3DL8	Galaxy Microelectronics	31A, 40V, 14.7W, N Channel, Dual MOSFETs	获取价格