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TCBAT43WS PDF预览

TCBAT43WS

更新时间: 2024-11-18 13:14:31
品牌 Logo 应用领域
TAK_CHEONG 整流二极管肖特基二极管开关
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TCBAT43WS 数据手册

 浏览型号TCBAT43WS的Datasheet PDF文件第2页 
®
TAK CHEONG  
SEMICONDUCTOR  
200 mW DO-35 Hermetically  
Sealed Glass Fast Switching  
Schottky Barrier Diode  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
DEVICE MARKING DIAGRAM  
Symbol  
Parameter  
Value  
Units  
PD  
TSTG  
TJ  
Power Dissipation  
200  
mW  
°C  
°C  
V
L
BAT  
xx  
Storage Temperature Range  
Operating Junction Temperature  
Repetitive Peak Reverse Voltage  
Maximum DC Blocking Voltage  
Average Forward Rectified Current  
Peak Forward Surge Current  
-65 to +125  
+125  
30  
VRRM  
VR  
L
= Logo  
30  
V
Device Code = BAT42 / BAT43  
IF(AV)  
IFSM  
200  
4
mA  
A
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Specification Features:  
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
Low Forward Voltage Drop  
Cathode  
Anode  
DO-35 Package (JEDEC)  
ELECTRICAL SYMBOL  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Compression Bonded Construction  
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable  
RoHS Compliant  
Solder Hot Dip Tin (Sn) Lead Finish  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Symbol  
Parameter  
Test Condition  
IR=100µA  
Unit  
Min  
Max  
BV  
IR  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
30  
Volts  
nA  
VR=25V  
500  
0.40  
0.65  
0.33  
0.45  
1.0  
VF  
TCBAT42, TCBAT42  
TCBAT42, TCBAT43  
TCBAT42, TCBAT43  
IF=10mA  
IF=50mA  
IF=2mA  
0.26  
Volts  
IF=15mA  
IF=200mA  
IF=IR=10mA  
RL=100  
IRR=1mA  
TRR  
Reverse Recovery Time  
Capacitance  
5 (Typical)  
nS  
pF  
C
VR=1V, f=1MHZ  
7 (Typical)  
March 2008 / B  
Page 1  

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