Datasheet > TCBAT85

TCBAT85

更新时间： 2024-11-19 17:15:55

品牌	Logo	应用领域
德昌 - TC		/
页数	文件大小	规格书
2页	63K
描述
DO-35

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中文翻译

获取价格

数据手册

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TCBAT85 数据手册

TAK CHEONG

SEMICONDUCTOR

200 mW DO-35 Hermetically

Sealed Glass Fast Switching

Schottky Barrier Diode

AXIAL LEAD

DO35

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

DEVICE MARKING DIAGRAM

Symbol

Parameter

Value

Units

P_D

T_STG

T_J

Power Dissipation

200

°C

BAT

Storage Temperature Range

Operating Junction Temperature

Repetitive Peak Reverse Voltage

Maximum DC Blocking Voltage

Average Forward Rectified Current

Peak Forward Surge Current

-65 to +125

+125

V_RRM

V_R

= Logo

Device Code = BAT85

I_F(AV)

I_FSM

200

These ratings are limiting values above which the serviceability of the diode may be impaired.

Specification Features:

§ Low Forward Voltage Drop

Cathode

Anode

§ DO-35 Package (JEDEC)

ELECTRICAL SYMBOL

§ Through-Hole Device Type Mounting

§ Hermetically Sealed Glass

§ Compression Bonded Construction

§ All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable

§ RoHS Compliant

§ Solder Hot Dip Tin (Sn) Lead Finish

Electrical Characteristics

T_A= 25°C unless otherwise noted

Parameter Test Condition

Limits

Symbol

Unit

Min

Typ

Max

B_V

I_R

Breakdown Voltage

I_R=10µA

Volts

Reverse Leakage Current

Forward Voltage

V_R=25V

V_F

TCBAT42

I_F=0.1mA

I_F=1mA

0.24

0.32

0.40

0.50

0.80

I_F=10mA

I_F=30mA

I_F=100mA

I_F=I_R=10mA

R_L=100W

I_RR=1mA

Volts

T_RR

Reverse Recovery Time

Capacitance

V_R=1V, f=1M_HZ

Number: DB-047

Jun 2016 / C

Page 1

中文翻译

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