Datasheet > TCBAT85

TCBAT85

更新时间： 2024-11-21 06:15:47

品牌	Logo	应用领域
TAK_CHEONG		肖特基二极管开关
页数	文件大小	规格书
2页	68K
描述
200 mW DO-35 Hermetically Sealed Glass Fast Switching Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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TCBAT85 数据手册

TAK CHEONG

SEMICONDUCTOR

200 mW DO-35 Hermetically

Sealed Glass Fast Switching

Schottky Barrier Diode

AXIAL LEAD

DO35

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

DEVICE MARKING DIAGRAM

Symbol

Parameter

Value

Units

P_D

T_STG

T_J

Power Dissipation

200

°C

BAT

Storage Temperature Range

Operating Junction Temperature

Repetitive Peak Reverse Voltage

Maximum DC Blocking Voltage

Average Forward Rectified Current

Peak Forward Surge Current

-65 to +125

+125

V_RRM

V_R

= Logo

Device Code = BAT85

I_F(AV)

I_FSM

200

These ratings are limiting values above which the serviceability of the diode may be impaired.

Specification Features:

Low Forward Voltage Drop

Cathode

Anode

DO-35 Package (JEDEC)

ELECTRICAL SYMBOL

Through-Hole Device Type Mounting

Hermetically Sealed Glass

Compression Bonded Construction

All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable

RoHS Compliant

Solder Hot Dip Tin (Sn) Lead Finish

Electrical Characteristics

T_A= 25°C unless otherwise noted

Parameter Test Condition

Limits

Symbol

Unit

Min

Typ

Max

B_V

I_R

Breakdown Voltage

I_R=10µA

Volts

Reverse Leakage Current

Forward Voltage

V_R=25V

V_F

TCBAT42

I_F=0.1mA

I_F=1mA

0.24

0.32

0.40

0.50

0.80

I_F=10mA

I_F=30mA

I_F=100mA

I_F=I_R=10mA

R_L=100Ω

I_RR=1mA

Volts

T_RR

Reverse Recovery Time

Capacitance

V_R=1V, f=1M_HZ

March 2008 / B

Page 1

中文翻译

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