Datasheet > TCBAV103

TCBAV103

更新时间： 2024-11-19 17:14:59

品牌	Logo	应用领域
德昌 - TC		/
页数	文件大小	规格书
2页	61K
描述
LL-34

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中文翻译

获取价格

数据手册

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TCBAV103 数据手册

TAK CHEONG

SEMICONDUCTOR

500 mW LL-34 Hermetically

Sealed Glass – High Voltage

Switching Diodes

SURFACE MOUNT

LL34

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_RRM

T_STG

Parameter

Value

Units

Maximum Repetitive Reverse Voltage

Storage Temperature Range

250

-65 to +175

175

DEVICE MARKING DIAGRAM

°C

T_J

Operating Junction Temperature

Average Rectified Forward Current

I_{F (AV)}

I_FSM

200

Non-repetitive Peak Forward Current

Pulse Width = 1.0 Second

1.0

4.0

Pulse Width = 1.0 µsecond

Cathode Band Color : Black

These ratings are limiting values above which the serviceability of the diode may be impaired.

Thermal Characteristics

Symbol

Parameter

Power Dissipation

Thermal Resistance, Junction to Ambient

Value

Units

P_D

500

350

R_θJA

°C/W

Specification Features:

§ LL-34 (Mini-MELF) Package

§ Surface Device Type Mounting

§ Hermetically Sealed Glass

§ Compression Bonded Construction

Cathode

Anode

§ All External Surfaces Are Corrosion Resistant And Terminals Are Readily Solderable

§ RoHS Compliant

ELECTRICAL SYMBOL

§ Matte Tin (Sn) Lead Finish

§ Color band Indicates Negative Polarity

Electrical Characteristics

T_A= 25°C unless otherwise noted

Parameter

Limits

Symbol

Test Condition

I_R=100µA

Unit

Min

Max

---

B_V

Breakdown Voltage

TCBAV100

TCBAV101

TCBAV102

TCBAV103

TCBAV100

TCBAV101

TCBAV102

TCBAV103

120

200

250

---

Volts

---

I_R

Reverse Leakage Current

V_R=50V

100

V_R=100V

V_R=150V

V_R=200V

---

V_F

Forward Voltage

I_F=100mA

I_F=I_R=30mA,

R_L=100W

I_RR=3mA

---

1.0

Volts

T_RR

Reverse Recovery Time

Capacitance

V_R=0V, f=1M_HZ

5.0

Number: DB-060

Jun.2016 / E

Page 1

中文翻译

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