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TCBAV21.TR PDF预览

TCBAV21.TR

更新时间: 2024-09-26 13:14:31
品牌 Logo 应用领域
TAK_CHEONG 整流二极管开关高压
页数 文件大小 规格书
2页 105K
描述
Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

TCBAV21.TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.23
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2JESD-609代码:e3
最大非重复峰值正向电流:4 A元件数量:1
端子数量:2最高工作温度:175 °C
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
最大重复峰值反向电压:250 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

TCBAV21.TR 数据手册

 浏览型号TCBAV21.TR的Datasheet PDF文件第2页 
®
TAK CHEONG  
SEMICONDUCTOR  
500 mW DO-35 Hermetically  
Sealed Glass – High Voltage  
Switching Diodes  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VRRM  
TSTG  
TJ  
Maximum Repetitive Reverse Voltage  
Storage Temperature Range  
250  
-65 to +200  
+175  
V
°C  
°C  
mA  
DEVICE MARKING DIAGRAM  
L
Operating Junction Temperature  
Average Rectified Forward Current  
BA  
Vx  
x
IF (AV)  
IFSM  
200  
Non-repetitive Peak Forward Current  
Pulse Width = 1.0 Second  
1.0  
4.0  
A
A
L
: Logo  
Device Code : TCBAVxx  
Pulse Width = 1.0 µsecond  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
Value  
Units  
PD  
500  
300  
mW  
RθJA  
°C/W  
Specification Features:  
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
DO-35 Package (JEDEC)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Cathode  
Anode  
Compression Bonded Construction  
All external surfaces are corrosion resistant and leads are readily solderable  
RoHS Compliant  
ELECTRICAL SYMBOL  
Solder hot dip Tin (Sn) lead finish  
Cathode indicated by polarity band  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Symbol  
Parameter  
Test Condition  
IR=100µA  
Unit  
Min  
120  
200  
250  
---  
Max  
---  
BV  
Breakdown Voltage  
TCBAV19  
TCBAV20  
TCBAV21  
TCBAV19  
TCBAV20  
TCBAV21  
Volts  
Volts  
Volts  
nA  
---  
---  
IR  
Reverse Leakage Current  
VR=100V  
100  
100  
100  
1.0  
1.25  
VR=150V  
---  
nA  
VR=200V  
---  
nA  
VF  
Forward Voltage  
IF=100mA  
IF=200mA  
IF=IR=30mA  
RL=100  
---  
Volts  
Volts  
---  
TRR  
Reverse Recovery Time  
---  
---  
50  
nS  
pF  
IRR=3mA  
C
Capacitance  
VR=0V, f=1MHZ  
5.0  
October 2006 / B  
Page 1  

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