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TC7WG74FK PDF预览

TC7WG74FK

更新时间: 2024-09-28 04:28:47
品牌 Logo 应用领域
东芝 - TOSHIBA 触发器
页数 文件大小 规格书
9页 198K
描述
CMOS Digital Integrated Circuit Silicon Monolithic D-Type Flip Flop with Preset and Clear

TC7WG74FK 技术参数

是否Rohs认证: 不符合生命周期:End Of Life
零件包装代码:SOIC包装说明:VSON, TSSOP8,.12,20
针数:8Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.43
系列:LVPJESD-30 代码:R-PDSO-N8
JESD-609代码:e0长度:2.3 mm
负载电容(CL):30 pF逻辑集成电路类型:D FLIP-FLOP
最大频率@ Nom-Sup:11000000 Hz最大I(ol):0.003 A
位数:1功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C输出极性:COMPLEMENTARY
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装等效代码:TSSOP8,.12,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE电源:1.2/3.3 V
传播延迟(tpd):54.4 ns认证状态:Not Qualified
座面最大高度:0.9 mm子类别:FF/Latches
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):0.9 V
标称供电电压 (Vsup):1.2 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
触发器类型:POSITIVE EDGE宽度:2 mm
最小 fmax:200 MHzBase Number Matches:1

TC7WG74FK 数据手册

 浏览型号TC7WG74FK的Datasheet PDF文件第2页浏览型号TC7WG74FK的Datasheet PDF文件第3页浏览型号TC7WG74FK的Datasheet PDF文件第4页浏览型号TC7WG74FK的Datasheet PDF文件第5页浏览型号TC7WG74FK的Datasheet PDF文件第6页浏览型号TC7WG74FK的Datasheet PDF文件第7页 
TC7WG74FU/FK  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7WG74FU,TC7WG74FK  
D-Type Flip Flop with Preset and Clear  
Features  
High-speed  
: f  
= 246 MHz (Typ.)  
MAX  
TC7WG74FU  
at  
V
CC  
= 3 V, CL=15pF  
High-level output current: : I /I = ±8 mA (min)  
OH OL  
at  
V
CC  
= 3 V  
Operation voltage range : VCC(opr)=0.9~3.6V  
5.5-V tolerant inputs  
3.6-V power down protection outputs  
TC7WG74FK  
Marking  
SM8  
G 74  
US8  
Product name  
Lot No.  
WG  
74  
Weight  
SSOP8-P-0.65 : 0.02 g (typ.)  
SSOP8-P-0.50A : 0.01 g (typ.)  
Absolute Maximum Ratings  
Pin Assignment (top view)  
Characteristics  
Power supply voltage  
Symbol  
Value  
Unit  
1
2
3
4
8
7
6
5
V
CK  
D
CC  
V
0.5~4.6  
0.5~7.0  
V
V
CC  
D
CK  
DC input voltage  
V
IN  
PR  
0.5~4.6 (Note 1)  
PR CLR  
DC output voltage  
V
V
OUT  
0.5~V  
+ 0.5 (Note 2)  
CC  
Q
CLR  
Q
Q
Q
Input diode current  
Output diode current  
DC output current  
I
20  
mA  
mA  
mA  
mA  
IK  
GND  
I
20 (Note 3)  
±25  
OK  
I
OUT  
DC V  
/ ground current  
I
±100  
CC  
CC  
300 (SM8)  
200 (US8)  
Power dissipation  
P
mW  
°C  
D
Storage temperature  
T
stg  
65~150  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1:  
Note 2:  
Note 3:  
V
= 0V  
CC  
High or Low State. I  
absolute maximum rating must be observed.  
OUT  
V
OUT  
< GND  
1
2007-11-01  

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