Datasheet > TC7WH00FU_09

TC7WH00FU_09

更新时间： 2024-11-16 12:22:59

品牌	Logo	应用领域
东芝 - TOSHIBA		栅
页数	文件大小	规格书
7页	200K
描述
Dual 2-Input NAND Gate

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中文翻译

获取价格

数据手册

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TC7WH00FU_09 数据手册

TC7WH00FU/FK

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7WH00FU,TC7WH00FK

Dual 2-Input NAND Gate

TC7WH00FU

Features

• High speed operation

: t_pd= 3.7ns (typ.)

at V_CC= 5 V, C = 15pF

•

Low power dissipation

High noise immunity

Operating voltage range

: I_CC= 2μA (max) at Ta = 25°C

: V

= V

= 28% V_CC(min)

NIH

NIL

: V_CC= 2 to 5.5 V

Balanced propagation delays : t_pLH≒ t_pHL

5.5-V Tolerant inputs

(SM8)

TC7WH00FK

Identical pin assignment and function with TC7W00

Marking

SM8

H 00

US8

Product Name

Lot No.

(US8)

Weight

SSOP8-P-0.65

SSOP8-P-0.50A

: 0.02 g (typ.)

: 0.01 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Supply voltage

Symbol

Rating

−0.5 to 7.0

−0.5 to VCC+0.5

−20

Unit

Pin Assignment (top view)

DC input voltage

DC output voltage

Input diode current

Output diode current

DC output current

OUT

±20

±25

(Note 1) mA

OUT

GND

DC V /GND current

±50

300 (SM8)

200 (US8)

−65 to 150

260

Power dissipation

Storage temperature

stg

°C

Lead Temperature (10s)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: V

< GND, V > V

OUT CC

OUT

2009-09-24

12 3 4 5 6 7

中文翻译

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