Datasheet > TC51WHM616BXGN70

TC51WHM616BXGN70

更新时间： 2024-01-24 07:15:56

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	280K
描述
IC 4M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48, 8 X 11 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TFBGA-48, Static RAM

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TC51WHM616BXGN70 技术参数

TC51WHM616BXGN70

Deep Power-down Timing

CE1

DPD

CE2

Power-on Timing

min

CE1

CHC

CE2

CHP

Provisions of Address Skew

Read

In case, multiple invalid address cycles shorter than t min sustain over 10μs in a active status, as least one

valid address cycle (with address change of any pins of A3-21) over t min must be needed during 10μs.

over 10μs

CE1

Address

t min

Write

In case, multiple invalid address cycles shorter than t min sustain over 10μs in a active status, as least one

valid address cycle (with address change of any pins of A3-21) over t min with t min must be needed during

10μs.

over 10μs

CE1

t min

Address

t min

2006-02-27 7/10

1...4 5 678 9 10

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