Datasheet > TC51WHM616AXGN70

TC51WHM616AXGN70

更新时间： 2024-02-12 23:16:01

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
11页	107K
描述
IC 4M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48, 8 X 11 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TFBGA-48, Static RAM

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技术参数
数据手册

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TC51WHM616AXGN70 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	TFBGA, BGA48,6X8,30
针数：	48	Reach Compliance Code：	unknown
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.81	Base Number Matches：	1

TC51WHM616AXGN70 数据手册

TC51WHM616AXGN65,70

ABSOLUTE MAXIMUM RATINGS (See Note 1)

SYMBOL

RATING

VALUE

UNIT

Power Supply Voltage

Input Voltage

−1.0 to 3.6

−25 to 85

−55 to 150

260

Output Voltage

OUT

opr.

Operating Temperature

Storage Temperature

°C

strg.

solder

Soldering Temperature (10 s)

Power Dissipation

0.6

Short Circuit Output Current

OUT

DC RECOMMENDED OPERATING CONDITIONS (Ta = −25°C to 85°C)

SYMBOL

PARAMETER

Power Supply Voltage

MIN

TYP.

2.75

MAX

3.3

UNIT

2.6

2.0

Input High Voltage

Input Low Voltage

+ 0.3*

−0.3*

0.4

* : V (Max) V +1.0 V with 10 ns pulse width

IH DD

V (Min) -1.0 V with 10 ns pulse width

DC CHARACTERISTICS (Ta = −25°C to 85°C, V = 2.6 to 3.3 V) (See Note 3 to 4)

SYMBOL

PARAMETER

TEST CONDITION

MIN

TYP. MAX

UNIT

Input Leakage Current

Output Leakage Current

Output High Voltage

Output Low Voltage

= 0 V to V

−1.0

2.0

+1.0

µA

Output disable, V

= 0 V to V

OUT DD

= − 0.5 mA

= 1.0 mA

0.4

CE1 = V

CE2 = V , I

Operating Current

= min

DDO1

= 0 mA

IH OUT

CE1 = V , CE2 = V

Page add. cycling, I

Page Access Operating Current

Standby Current(MOS)

DDO2

= 0 mA

OUT

CE1 = V

− 0.2 V, CE2 = V

− 0.2 V

100

µA

DDS

Deep Power-down Standby Current CE2 = 0.2 V

DDSD

CAPACITANCE (Ta = 25°C, f = 1 MHz)

SYMBOL

PARAMETER

TEST CONDITION

= GND

MAX

UNIT

Input Capacitance

Output Capacitance

OUT

= GND

OUT

Note: This parameter is sampled periodically and is not 100% tested.

2002-04-03 3/11

1 234 5 6 7...11

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