Datasheet > TC2320

TC2320

更新时间： 2024-09-19 14:54:39

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
12页	798K
描述
TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package

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TC2320 数据手册

TC2320

N-Channel and P-Channel Enhancement-Mode Dual MOSFET

Features

General Description

• Low Threshold

The TC2320 consists of a high-voltage, low-threshold

N-channel and P-channel MOSFET in an 8-Lead SOIC

package. This Enhancement-mode (normally-off)

transistor uses an advanced vertical DMOS structure

and a well-proven silicon gate manufacturing process.

This combination produces a device with the power

handling capabilities of bipolar transistors and high

input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally induced secondary breakdown.

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speeds

• Free from Secondary Breakdown

• Low Input and Output Leakage

• Independent, Electrically Isolated N-Channel and

P-Channel

Applications

Microchip’s vertical DMOS FETs are ideally suited for a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance

and fast switching speeds are desired.

• Medical Ultrasound Transmitters

• High-Voltage Pulsers

• Amplifiers

• Buffers

• Piezoelectric Transducer Drivers

• General Purpose Line Drivers

• Logic-Level Interface

Package Type

8-lead SOIC

(Top view)

See Table 2-1 for pin information.

 2017-2021 Microchip Technology Inc.

DS20005708B-page 1

12 3 4 5 6 7...12

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