Datasheet > TC237H

TC237H

更新时间： 2024-09-18 21:17:43

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
15页	213K
描述
SPECIALTY ANALOG CIRCUIT, CDIP12, 1.78 MM PITCH, WINDOWED, CERAMIC, DIP-12

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TC237H 技术参数

是否无铅：	含铅	生命周期：	Obsolete
零件包装代码：	WDIP	包装说明：	WSDIP,
针数：	12	Reach Compliance Code：	unknown
HTS代码：	8542.39.00.01	风险等级：	5.83
其他特性：	ALSO REQUIRES 16V, 26V AND 15V SUPPLIES	模拟集成电路 - 其他类型：	ANALOG CIRCUIT
JESD-30 代码：	R-CDIP-T12	长度：	12.2 mm
功能数量：	1	端子数量：	12
最高工作温度：	45 °C	最低工作温度：	-10 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装代码：	WSDIP
封装形状：	RECTANGULAR	封装形式：	IN-LINE, WINDOW, SHRINK PITCH
认证状态：	Not Qualified	座面最大高度：	5.78 mm
最大供电电压 (Vsup)：	23 V	最小供电电压 (Vsup)：	21 V
标称供电电压 (Vsup)：	22 V	表面贴装：	NO
技术：	MOS	温度等级：	COMMERCIAL
端子形式：	THROUGH-HOLE	端子节距：	1.778 mm
端子位置：	DUAL	宽度：	11.43 mm
Base Number Matches：	1

TC237H 数据手册

TC237B

680- × 500-PIXEL CCD IMAGE SENSOR

SOCS063 – APRIL 2001

DUAL-IN-LINE PACKAGE

(TOP VIEW)

High Resolution, 1/3-in Solid-State Image

Sensor for NTSC Black and White

Applications

ODB 1

IAG2 2

SUB 3

12 IAG1

11 SAG

10 SAG

9 SUB

8 SRG

7 RST

340,000 Pixels per Field

Frame Memory

658 (H) × 496 (V) Active Elements in Image

Sensing Area Compatible With Electronic

Centering

ADB 4

Multimode Readout Capability

– Progressive Scan

– Interlaced Scan

OUT1 5

OUT2 6

– Dual-Line Readout

– Image Area Line Summing

– Smear Subtraction

High Photoresponse Uniformity

High Dynamic Range

High Sensitivity

Fast Single-Pulse Clear Capability

Continuous Electronic Exposure Control

From 1/60–1/50,000 s

High Blue Response

7.4-µm Square Pixels

Solid-State Reliability With No Image

Burn-In, Residual Imaging, Image

Distortion, Image Lag, or

Microphonics

Advanced Lateral Overflow Drain

Antiblooming

Low Dark Current

description

The TC237B is a frame-transfer, charge-coupled device (CCD) image sensor designed for use in single-chip

black and white National Television Standards Committee (NTSC) TV, computer, and special-purpose

applications that require low cost and small size.

The image-sensing area of the TC237B device is configured into 500 lines with 680 elements in each line.

Twenty-two elements are provided in each line for dark reference. The antiblooming feature of the sensor is

based on an advanced lateral overflow drain concept. The sensor can be operated in a true interlace mode as

a 658(H) × 496(V) sensor with a low dark current. An important feature of the TC237B high-resolution sensor

is the ability to capture a full 340,000 pixels per field. The image sensor also provides high-speed image transfer

capability and a continuous electronic exposure control without the loss of sensitivity and resolution inherent

in other technologies. Charge voltage is converted to signal voltage at 13 µV per electron by a high-performance

structure with a reset and a voltage-reference generator. The signal is further buffered by a low-noise,

two-stage, source-follower amplifier to provide high-output drive capability.

The TC237B sensor is built using TI-proprietary advanced virtual-phase (AVP) technology, which provides

devices with high blue response, low dark current, high photoresponse uniformity, and single-phase clocking.

The TC237B sensor is characterized for operation from –10°C to 45°C.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together

or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to V . Under no

circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to V

during operation to prevent

damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is

allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling

Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

TI is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...15

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