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TC236 PDF预览

TC236

更新时间: 2024-11-07 03:28:47
品牌 Logo 应用领域
德州仪器 - TI 传感器图像传感器
页数 文件大小 规格书
15页 189K
描述
680-】500-PIXEL CCD IMAGE SENSOR

TC236 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84水平像素:496
安装特点:THROUGH HOLE MOUNT最高工作温度:45 °C
最低工作温度:-10 °C像素大小:7.4X7.4 µm
电源:22 V子类别:CCD Image Sensors
表面贴装:NO垂直像素:658
Base Number Matches:1

TC236 数据手册

 浏览型号TC236的Datasheet PDF文件第2页浏览型号TC236的Datasheet PDF文件第3页浏览型号TC236的Datasheet PDF文件第4页浏览型号TC236的Datasheet PDF文件第5页浏览型号TC236的Datasheet PDF文件第6页浏览型号TC236的Datasheet PDF文件第7页 
TC236  
680- × 500-PIXEL CCD IMAGE SENSOR  
SOCS043A – JUNE 1994 – REVISED NOVEMBER 1994  
Very High-Resolution, 1/3-in Solid-State  
Image Sensor for NTSC Color Applications  
Continuous Electronic Exposure Control  
From 1/60 – 1/50,000 s  
340,000 Pixels per Field  
Frame Memory  
7.4-µm Square Pixels  
Advanced Lateral-Overflow-Drain  
Antiblooming  
658 (H) × 496 (V) Active Elements in  
Image-Sensing Area Compatible With  
Electronic Centering  
Low Dark Current  
High Dynamic Range  
High Sensitivity  
Multimode Readout Capability  
– Progressive Scan  
– Interlaced Scan  
High Blue Response  
Solid-State Reliability With No Image  
Burn-In, Residual Imaging, Image  
Distortion, Image Lag, or Microphonics  
– Dual-Line Readout  
Fast Single-Pulse Clear Capability  
description  
TheTC236isaframe-transfer, charge-coupleddevice(CCD)imagesensordesignedforuseinsingle-chipcolor  
NTSC TV, computer, and special-purpose applications requiring low cost and small size.  
The image-sensing area of the TC236 is configured into 500 lines with 680 elements in each line. Twenty-two  
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based  
on an advanced lateral-overflow-drain concept. The sensor can be operated in a true-interlace mode as a  
658(H) × 496(V) sensor with a very low dark current. One important feature of the TC236 very high-resolution  
sensor is the ability to capture a full 340,000 pixels per field. The image sensor also provides high-speed image-  
transfer capability. This capability allows for a continuous electronic exposure control without the loss of  
sensitivity and resolution inherent in other technologies. The charge is converted to signal voltage at 20 µV per  
electron by a high-performance structure with a reset and a voltage-reference generator. The signal is further  
buffered by a low-noise, two-stage, source-follower amplifier to provide high output-drive capability.  
The TC236 is built using TI-proprietary advanced virtual-phase (AVP) technology, which provides devices with  
high blue response, low dark signal, good uniformity, and single-phase clocking. The TC236 is characterized  
for operation from 10°C to 45°C.  
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together  
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to V . Under no  
SS  
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to V  
during operation to prevent  
SS  
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is  
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling  
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.  
Copyright 1994, Texas Instruments Incorporated  
ADVANCE INFORMATION concerns new products in the sampling or  
preproduction phase of development. Characteristic data and other  
specifications are subject to change without notice.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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