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SZMMSZ4701ET1 PDF预览

SZMMSZ4701ET1

更新时间： 2024-11-03 04:44:39
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
5页 163K
描述
DIODE VOLTAGE REGULATOR DIODE, Voltage Regulator Diode

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中文翻译

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SZMMSZ4701ET1 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.22二极管类型：ZENER DIODE

SZMMSZ4701ET1 数据手册

 浏览型号SZMMSZ4701ET1的Datasheet PDF文件第2页浏览型号SZMMSZ4701ET1的Datasheet PDF文件第3页浏览型号SZMMSZ4701ET1的Datasheet PDF文件第4页浏览型号SZMMSZ4701ET1的Datasheet PDF文件第5页 
MMSZ4xxxET1 Series,  
SZMMSZ4xxxET1G Series  
Zener Voltage Regulators  
500 mW SOD−123 Surface Mount  
Three complete series of Zener diodes are offered in the convenient,  
surface mount plastic SOD−123 package. These devices provide a  
convenient alternative to the leadless 34−package style.  
http://onsemi.com  
Features  
1
2
• 500 mW Rating on FR−4 or FR−5 Board  
• Wide Zener Reverse Voltage Range − 1.8 V to 43 V  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
• ESD Rating of Class 3 (>16 kV) per Human Body Model  
• Peak Power − 225 W (8 x 20 ms)  
Cathode  
Anode  
SOD−123  
CASE 425  
STYLE 1  
2
• AEC−Q101 Qualified and PPAP Capable  
1
• SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
• Pb−Free Packages are Available  
MARKING DIAGRAM  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
xxx M G  
1
G
xxx = Device Code (Refer to page 2)  
M
G
= Date Code  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
MAXIMUM RATINGS  
†
Rating  
Symbol  
Max  
Unit  
Device  
Package  
Shipping  
Peak Power Dissipation @ 20 ms (Note 1)  
P
pk  
225  
W
MMSZ4xxxET1  
SOD−123  
3000 / Tape &  
Reel  
@ T ≤ 25°C  
L
Total Power Dissipation on FR−5 Board,  
P
D
MMSZ4xxxET1G  
SOD−123  
(Pb−Free)  
3000 / Tape &  
Reel  
(Note 2) @ T = 75°C  
500  
6.7  
mW  
mW/°C  
L
Derated above 75°C  
SZMMSZ4xxxET1G SOD−123  
(Pb−Free)  
3000 / Tape &  
Reel  
Thermal Resistance, (Note 3)  
Junction−to−Ambient  
R
340  
°C/W  
°C/W  
°C  
q
JA  
MMSZ4xxxET3  
SOD−123  
10000 / Tape &  
Reel  
Thermal Resistance, (Note 3)  
Junction−to−Lead  
R
q
JL  
150  
MMSZ4xxxET3G  
SOD−123  
(Pb−Free)  
10000 / Tape &  
Reel  
Junction and Storage Temperature Range  
T , T  
J
−55 to  
+150  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Nonrepetitive current pulse per Figure 11.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.  
3. Thermal Resistance measurement obtained via infrared Scan Method.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 − Rev. 5  
MMSZ4678ET1/D  
 
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