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SZMMSZ4711T3G PDF预览

SZMMSZ4711T3G

更新时间： 2024-11-29 11:01:39
品牌 Logo 应用领域
安森美 - ONSEMI 测试二极管齐纳二极管
页数 文件大小 规格书
6页 150K
描述
Low Current Zener Diode Voltage Regulator

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中文翻译

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SZMMSZ4711T3G 技术参数

是否无铅： 不含铅生命周期：Active
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：4 weeks风险等级：5.64
配置：SINGLE二极管类型：ZENER DIODE
JESD-609代码：e3湿度敏感等级：1
元件数量：1最高工作温度：150 °C
最大功率耗散：0.5 W标称参考电压：27 V
子类别：Voltage Reference Diodes表面贴装：YES
端子面层：Tin (Sn)最大电压容差：5%
工作测试电流：0.05 mABase Number Matches：1

SZMMSZ4711T3G 数据手册

 浏览型号SZMMSZ4711T3G的Datasheet PDF文件第2页浏览型号SZMMSZ4711T3G的Datasheet PDF文件第3页浏览型号SZMMSZ4711T3G的Datasheet PDF文件第4页浏览型号SZMMSZ4711T3G的Datasheet PDF文件第5页浏览型号SZMMSZ4711T3G的Datasheet PDF文件第6页 
MMSZ4xxxT1G Series,  
SZMMSZ4xxxT1G Series  
Zener Voltage Regulators  
500 mW SOD−123 Surface Mount  
Three complete series of Zener diodes are offered in the convenient,  
surface mount plastic SOD−123 package. These devices provide a  
convenient alternative to the leadless 34−package style.  
http://onsemi.com  
Features  
500 mW Rating on FR−4 or FR−5 Board  
Wide Zener Reverse Voltage Range − 1.8 V to 43 V  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
ESD Rating of Class 3 (> 16 kV) per Human Body Model  
SOD−123  
CASE 425  
STYLE 1  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
1
2
Cathode  
Anode  
Pb−Free Packages are Available*  
MARKING DIAGRAM  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260C for 10 Seconds  
xx M G  
1
G
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
xx = Device Code (Refer to page 3)  
M
= Date Code  
G
= Pb−Free Package  
MAXIMUM RATINGS  
(Note: Microdot may be in either location)  
Rating  
Symbol  
Max  
Units  
ORDERING INFORMATION  
Total Power Dissipation on FR−5 Board,  
P
D
(Note 1) @ T = 75C  
500  
6.7  
mW  
mW/C  
L
†
Derated above 75C  
Device  
Package  
Shipping  
MMSZ4xxxT1G  
SOD−123  
(Pb−Free)  
3,000 /  
Tape & Reel  
Thermal Resistance, (Note 2)  
R
C/W  
C/W  
C  
q
JA  
Junction−to−Ambient  
340  
150  
SZMMSZ4xxxT1G SOD−123  
(Pb−Free)  
3,000 /  
Tape & Reel  
Thermal Resistance, (Note 2)  
Junction−to−Lead  
R
JL  
q
MMSZ4xxxT3G  
SOD−123  
(Pb−Free)  
10,000 /  
Tape & Reel  
Junction and Storage Temperature Range  
T , T  
J
−55 to  
+150  
stg  
SZMMSZ4xxxT3G SOD−123  
(Pb−Free)  
10,000 /  
Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint.  
2. Thermal Resistance measurement obtained via infrared Scan Method.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
February, 2012 − Rev. 9  
MMSZ4678T1/D  
 
123456

中文翻译

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SZMMSZ4711T3G 替代型号

型号 品牌 替代类型 描述 数据表
DDZ9711-7 DIODES

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