Datasheet > SUT041G

SUT041G

更新时间： 2024-11-20 08:58:03

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
5页	392K
描述
Dual NPN Bipolar transistor

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中文翻译

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SUT041G 数据手册

SUT041G

Dual NPN Bipolar transistor

Descriptions

• General purpose amplifier

• Recommended for LED Drive Application

Features

• Thermally Enhanced Power PKG

• Low saturation: V_CE(sat)= 0.5V Max

• 2 NPN chips in TESOP-8 Package

TESOP-8

Ordering Information

Type NO.

Marking

Package Code

SUT041G

TESOP-8

^SUT041□

□ : Year & Week Code

Absolute maximum ratings(TR1, TR2)

(Ta=25°C)

Unit

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

A(DC)

A(Pulse)

W/TOTAL

W/ELEMENT

W/TOTAL

°C

Collector current

I_CP*

0.75

0.55

P_C(Ta=25°C) **

Collector power dissipation

P_C(Tc=25°C)

Junction temperature

Storage temperature

* : Single pulse, tp= 300 ㎲

T_J

150

-55~150

T_stg

°C

** : Each terminal mounted on a recommended solder land

Electrical Characteristics(TR1, TR2)

Characteristic

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

Min. Typ. Max. Unit

I_C=100μA, I_E=0

I_C=1mA, I_B=0

I_E=10μA, I_C=0

V_CB=45V, I_E=0

0.1

320

0.5

μA

Emitter cut-off current

I_EBO

V_EB=5V, I_C=0

DC current gain

V_CE=1V, I_C=100mA

I_C=500mA, I_B=50mA

V_CE=5V, I_C=10mA

V_CB=10V, I_E=0, f=1MHz

160

h_FE

Collector-Emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

150

MHz

Collector output capacitance

Note 1) hFE Rank : 160~320 only

C_ob

KSD-T7K001-000

12 3 4 5

中文翻译

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