SUT461N

更新时间： 2024-11-18 08:58:03

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
5页	290K
描述
Epitaxial planar NPN silicon transistor

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SUT461N 数据手册

SUT461N

Epitaxial planar NPN silicon transistor

Descriptions

• Complex type bipolar transistor

Features

• Reduce quantity of parts and mounting cost

• High collector power dissipation : P_C=300mW(Max.)

• Two 2SC5343 chips in SOT-26 Package

Package : SOT-26

Ordering Information

Type NO.

Marking

Package Code

SUT461N

⁶⁹□

SOT-26

□ : Year & Week Code

Equivalent circuit & PIN Connections

• Equivalent Circuit

PIN Connections

1. Collector 1

2. Base 2

3. Emitter 2

4. Collector 2

5. Base 1

Tr1

Tr2

6. Emitter 1

Absolute Maximum Ratings [Tr1, Tr2]

(Ta=25°C)

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

150

°C

※

P_C

Collector power dissipation

Junction temperature

Storage temperature range

300

T_J

150

T_stg

-55~150

°C

※: Total rating(Each terminal mounted on a recommended solder land)

KSD-T5P001-002

12 3 4 5

中文翻译

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