Datasheet > SUT465N

SUT465N

更新时间： 2024-11-18 08:58:03

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
6页	334K
描述
Dual NPN+PNP complementary Bipolar transistor

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SUT465N 数据手册

SUT465N

Dual NPN+PNP complementary Bipolar transistor

Descriptions

• Complex type bipolar transistor

Features

• Reduce quantity of parts and mounting cost

• High collector power dissipation : P_C=300mW(Max.)

• 2 NPN+PNP Chips in SOT-26 PKG

Package : SOT-26

Ordering Information

Type NO.

Marking

Package Code

SUT465N

SOT-26

5N◇□

◇: Hfe rank, □ : Year & Week Code

PIN Assignment & Description

Description

Emitter 2

Base 2

Collector 1

Emitter 1

Base 1

Collector 2

[Pin Assignment]

Absolute Maximum Ratings [Tr1, Tr2]

Ratings

Characteristic

Symbol

Unit

Tr1

Tr2

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

V_CBO

V_CEO

V_EBO

I_C

-60

-40

-5

600

1.2

-600

-1.2

mA(DC)

A(AC)

°C

Collector current

I_CP*

P_C**

T_J

Collector power dissipation

Junction temperature

Storage temperature

300

150

T_stg

-55~150

°C

* : Single pulse, tp= 300 ㎲

** : Total rating(Each terminal mounted on a recommended solder land)

KSD-T5P006-001

12 3 4 5 6

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