Datasheet > SUT061G

SUT061G

更新时间： 2024-11-18 08:58:03

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
5页	368K
描述
Dual NPN Bipolar transistor

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中文翻译

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SUT061G 数据手册

SUT061G

Dual NPN Bipolar transistor

Descriptions

• General purpose amplifier

• Recommended for LED Drive Application

Features

• Thermally Enhanced Power PKG

• Low saturation: V_CE(sat)= 0.4V Max

• 2 NPN chips in TESOP-8 Package

TESOP-8

Ordering Information

Type NO.

Marking

Package Code

SUT061

TESOP-8

^SUT061□

□ : Year & Week Code

Absolute maximum ratings(TR1, TR2)

Characteristic

Collector-Base voltage

(Ta=25°C)

Unit

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Collector-Emitter voltage

Emitter-Base voltage

A(DC)

A(Pulse)

W/TOTAL

W/ELEMENT

W/TOTAL

°C

Collector current

I_CP*

0.75

0.55

7.5

P_C(Ta=25°C) **

Collector power dissipation

P_C(Tc=25°C)

Junction temperature

Storage temperature

T_J

150

-55~150

T_stg

°C

* : Single pulse, tp= 300 ㎲

** : Each terminal mounted on a recommended solder land

Electrical Characteristics(TR1, TR2)

Characteristic

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

I_C=100 ㎂, I_E=0

Min. Typ. Max. Unit

I_C=1mA, I_B=0

I_E=10mA, I_C=0

V_CB=60V, I_E=0

0.1

400

μA

Emitter cut-off current

I_EBO

V_EB=5V, I_C=0

V_CE=2V, I_C=100mA

V_CE=2V, I_C=1A

200

DC current gain

h_FE

Base-Emitter on voltage

V_BE(ON)

V_CE(sat)

C_ob

V_CE=2V, I_C=500mA

I_C=500mA, I_B=50mA

V_CB=10V, I_E=0, f=1MHz

V_CB=10V, I_C=50mA

1.2

0.4

Collector-Emitter saturation voltage

Collector output capacitance

Transition frequency

160

f_T

MHz

Note 1) hFE Rank : 200~400 only

KSD-T7K002-000

12 3 4 5

中文翻译

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