Datasheet > SUT121G

SUT121G

更新时间： 2024-11-18 12:50:11

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
5页	414K
描述
Dual NPN Bipolar transistor

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SUT121G 数据手册

SUT121G

Dual NPN Bipolar transistor

Descriptions

• General purpose amplifier

• Recommended for LED Drive Application

Features

• Thermally Enhanced Power PKG

• Low saturation: V_CE(sat)= 0.5V Max

• 2 NPN chips in TESOP-8 Package

TESOP-8

Ordering Information

Type NO.

Marking

Package Code

SUT121G

TESOP-8

^SUT121□

□ : Year & Week Code

Absolute maximum ratings(TR1, TR2)

(Ta=25°C)

Unit

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

120

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

A(DC)

A(Pulse)

W/TOTAL

W/ELEMENT

W/TOTAL

°C

Collector current

I_CP*

0.75

0.55

7.5

P_C(Ta=25°C) **

Collector power dissipation

P_C(Tc=25°C)

Junction temperature

Storage temperature

* : Single pulse, tp= 300 ㎲

T_J

150

-55~150

T_stg

°C

** : Each terminal mounted on a recommended solder land

Electrical Characteristics(TR1, TR2)

Characteristic

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

Min. Typ. Max. Unit

I_C=100μA, I_E=0

120

I_C=1mA, I_B=0

120

I_E=100μA, I_C=0

V_CB=120V, I_E=0

0.1

400

0.5

1.2

㎂

Emitter cut-off current

I_EBO

V_EB=4V, I_C=0

DC current gain

200

h_FE

V_CE=5V, I_C= 30 ㎃

I_C=500mA, I_B=50mA

V_CE=5V, I_C= 50 ㎃

V_CB=10V, I_E=0, f=1 ㎒

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

170

㎒

㎊

Collector output capacitance

C_ob

Note 1) hFE Rank : 200~400 only

KSD-T7K003-000

12 3 4 5

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