Datasheet > SUT101N

SUT101N

更新时间： 2024-11-18 08:58:03

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
6页	394K
描述
Epitaxial planar PNP/NPN silicon transistor

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SUT101N 数据手册

SUT101N

Epitaxial planar PNP/NPN silicon transistor

Descriptions

• Complex type bipolar transistor

Features

• Reduce quantity of parts and mounting cost

• High collector power dissipation : P_C=500mW(Max.)

Package : SOT-26

Ordering Information

Type NO.

Marking

Package Code

SUT101N

SOT-26

VX◇□

◇: Hfe rank, □ : Year & Week Code

PIN Assignment & Description

Description

Base(Tr 1)

Tr1

Tr2

Emitter(Tr 1/Tr 2)

Base(Tr 2)

Collector(Tr 2)

Collector(Tr 1)

[Pin Assignment]

Absolute Maximum Ratings

(Ta=25°C)

Rating

Characteristic

Symbol

Unit

Tr1

Tr2

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

V_CBO

V_CEO

V_EBO

I_C

-40

-32

-5

-1

A(DC)

A(Pulse)

Collector current

I_CP*

-2

Power dissipation

P_C**

T_J

0.5

°C

Junction temperature

Storage temperature range

* : Single pulse, tp= 300 ㎲

150

T_stg

-55~150

** : Total rating(Each terminal mounted on a recommended solder land)

KSD-T5P005-001

12 3 4 5 6

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