Datasheet > SUT290

SUT290

更新时间： 2024-11-18 08:58:03

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
6页	328K
描述
Dual NPN-PNP complementary Bipolar transistor

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SUT290 数据手册

SUT290

Dual NPN-PNP complementary Bipolar transistor

Features

• Low VCE(sat)=0.5V (Typ.)

• Simplified circuit design

• Reduced component count

Applications

• Push-Pull or Totem-Pole configuration

• MOSFET and IGBT gate driving

• Motor, relay and solenoid driving

SOP-8

Internal schematic diagram

Description

The SUT290 is a Hybrid dual NPN-PNP

complementary power bipolar transistor

manufactured by using the latest low voltage

planar technology. The SUT290 is housed in

dual island SOP-8 package with separated

terminals for higher assembly flexibility,

specifically recommended to be used in Push-Pull

or Totem Pole configuration as post IGBTs and

MOSFETs driver.

Ordering Information

Type NO.

Marking

Package Code

SUT290

SOP-8

Absolute Maximum Ratings

(Ta=25°C)

Rating

Unit

Characteristic

Symbol

Tr1

Tr2

-40

-32

-5

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CBO

V_CEO

V_EBO

I_C

-2

W/TOTAL

W/ELEMENT

°C

※

P_D

Power dissipation

1.4

150

Junction temperature

T_J

Storage temperature range

T_stg

-55~150

°C

※: When mounted on 40x40x0.8 ㎜ ceramic substrate

KSD-T7F006-001

12 3 4 5 6

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