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SUD50N02-11P-E3 PDF预览

SUD50N02-11P-E3

更新时间: 2024-11-29 20:50:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 77K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SUD50N02-11P-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.82配置:Single
最大漏极电流 (Abs) (ID):18 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):38 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

SUD50N02-11P-E3 数据手册

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SUD50N02-11P  
Vishay Siliconix  
N-Channel 20-V (D-S) 175_C MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D 175_C Junction Temperature  
D PWM Optimized for High Efficiency  
D 100% Rg Tested  
VDS (V)  
rDS(on) (W)  
ID (A)a  
0.011 @ V = 10 V  
18  
GS  
20  
APPLICATIONS  
0.020 @ V = 4.5 V  
GS  
13.5  
D High-Side Synchronous Buck DC/DC  
Conversion  
Desktop  
Server  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
S
N-Channel MOSFET  
Ordering Information: SUD50N02-11P  
SUD50N02-11P—E3 (Lead Free)  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
"20  
18  
DS  
GS  
V
V
T
= 25_C  
A
a
Continuous Drain Current  
I
D
T = 100_C  
C
13  
A
Pulsed Drain Current  
I
100  
4.1  
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
T
= 25_C  
= 25_C  
6.25  
A
Maximum Power Dissipation  
P
D
W
a
T
38  
C
Operating Junction and Storage Temperature Range  
T , T  
55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
19  
40  
24  
50  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
Steady State  
_C/W  
Maximum Junction-to-Case  
3.2  
3.9  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
b. Limited by package  
Document Number: 72094  
S-41168—Rev. B, 14-Jun-04  
www.vishay.com  
1

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