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SUD50N03-07 PDF预览

SUD50N03-07

更新时间: 2024-11-29 12:24:23
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飞思卡尔 - FREESCALE /
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5页 479K
描述
N-Channel 30 V (D-S) 175 °C MOSFET

SUD50N03-07 数据手册

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SUD50N03-07  
N-Channel  
30 V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D 175_C Maximum Junction Temperature  
D 100% Rg Tested  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.007 @ V = 10 V  
20  
16  
GS  
30  
0.010 @ V = 4.5 V  
GS  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
Ordering Information:  
S
SUD50N03-07  
SUD50N03-07—E3 ( Lead Free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
"20  
20  
DS  
GS  
V
V
T
= 25_C  
= 100_C  
A
a
Continuous Drain Current  
I
D
T
A
14  
A
Pulsed Drain Current  
I
100  
20  
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
T
T
= 25_C  
= 25_C  
136  
C
Maximum Power Dissipation  
P
D
W
a
5
A
Operating Junction and Storage Temperature Range  
T , T  
55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
30  
_
C/W  
Maximum Junction-to-Case  
0.85  
1.1  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
www.freescale.net.cn  
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