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SUD50N03-07-E3

更新时间： 2024-11-28 22:17:47

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
4页	61K
描述
N-Channel 30-V (D-S) 175C MOSFET

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中文翻译

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技术参数
数据手册

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SUD50N03-07-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.82	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	20 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	136 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

SUD50N03-07-E3 数据手册

SUD50N03-07

Vishay Siliconix

N-Channel 30-V (D-S) 175_C MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D 175_C Maximum Junction Temperature

D 100% R_gTested

0.007 @ V = 10 V

0.010 @ V = 4.5 V

TO-252

Drain Connected to Tab

Top View

Ordering Information:

N-Channel MOSFET

SUD50N03-07

SUD50N03-07—E3 ( Lead Free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 100_C

Continuous Drain Current

Pulsed Drain Current

100

Continuous Source Current (Diode Conduction)

= 25_C

136

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient

thJA

thJC

C/W

Maximum Junction-to-Case

0.85

1.1

Notes

a. Surface Mounted on FR4 Board, t v 10 sec.

Document Number: 70767

S-40272—Rev. E, 23-Feb-04

www.vishay.com

12 3 4

中文翻译

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