Datasheet > STWA38N65DM6AG

STWA38N65DM6AG

更新时间： 2023-12-20 18:46:16

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	254K
描述
汽车级N沟道650 V、68 mOhm典型值、42 A MDmesh DM6功率MOSFET，TO-247长引线封装

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STWA38N65DM6AG 数据手册

STWA38N65DM6AG

Electrical characteristics

Table 7. Source-drain diode

Test conditions

Symbol

Parameter

Source-drain current

Min.

Typ. Max. Unit

(1)

Source-drain current (pulsed)

Forward on voltage

140

SDM

(2)

= 0 V, I = 42 A

1.6

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery time

Reverse recovery charge

123

0.7

9.0

320

4.8

µC

= 42 A, di/dt = 100 A/μs, V = 100 V

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

RRM

= 42 A, di/dt = 100 A/μs,

= 100 V, T = 150 °C

µC

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

Reverse recovery current

RRM

1. Pulse width is limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

DS13783 - Rev 1

page 4/12

1 2 345 6 7...12

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