Datasheet > STWA38N65DM6AG

STWA38N65DM6AG

更新时间： 2023-12-20 18:46:16

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	254K
描述
汽车级N沟道650 V、68 mOhm典型值、42 A MDmesh DM6功率MOSFET，TO-247长引线封装

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中文翻译

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STWA38N65DM6AG 数据手册

STWA38N65DM6AG

Electrical characteristics

T_C= 25 °C unless otherwise specified

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

= 0 V, I = 1 mA

Drain-source breakdown voltage

650

(BR)DSS

= 0 V, V = 650 V

Zero gate voltage drain current

μA

DSS

= 0 V, V = 650 V, T = 125 °C ⁽¹⁾

200

= 0 V, V = ±25 V

Gate-body leakage current

Gate threshold voltage

±5

4.75

μA

GSS

= V , I = 250 μA

3.25

GS(th)

DS(on)

= 10 V, I = 21 A

Static drain-source on-resistance

mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic characteristics

Test conditions

Symbol

Parameter

Input capacitance

Min.

Typ. Max. Unit

iss

2805

176

1.3

oss

= 100 V, f = 1 MHz, V = 0 V

Output capacitance

rss

Reverse transfer capacitance

Equivalent output capacitance

Intrinsic gate resistance

Total gate charge

(1)

= 0 to 520 V, V = 0 V

oss eq.

480

1.4

f = 1 MHz, I = 0 A

54.4

16.8

18.7

= 520 V, I = 42 A, V = 0 to 10 V

D GS

Gate-source charge

(see Figure 14. Test circuit for gate

charge behavior)

Gate-drain charge

oss eq

is defined as a constant equivalent capacitance giving the same charging time as C

when V increases from 0

oss DS

to 80% V

DSS

Table 6. Switching times

Test conditions

Symbol

Parameter

Min.

Typ. Max. Unit

Turn-on delay time

Rise time

= 325 V, I = 21 A,

d(on)

= 4.7 Ω , V = 10 V

(see Figure 13. Test circuit for

resistive load switching times and

Figure 18. Switching time waveform)

Turn-off delay time

Fall time

d(off)

DS13783 - Rev 1

page 3/12

1 234 5 6 7...12

中文翻译

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