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STTH2002C PDF预览

STTH2002C

更新时间: 2024-02-25 16:50:28
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管功效
页数 文件大小 规格书
7页 97K
描述
HIGH EFFICIENCY ULTRAFAST DIODE

STTH2002C 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.64其他特性:FREE WHEELING DIODE
应用:ULTRA FAST RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:175 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.04 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

STTH2002C 数据手册

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®
STTH2002C  
HIGH EFFICIENCY ULTRAFAST DIODE  
MAIN PRODUCT CHARACTERISTICS  
IF(AV) Up to 2 x 15A  
VRRM  
A1  
A2  
K
200 V  
175 °C  
0.78 V  
22 ns  
Tj (max)  
VF (typ)  
trr (typ)  
FEATURES AND BENEFITS  
A2  
A2  
K
K
Suited for SMPS  
Low losses  
Low forward and reverse recovery times  
Low leakage current  
High junction temperature  
Insulated package: TO-220FPAB  
A1  
A1  
TO-220AB  
I2PAK  
STTH2002CT  
STTH2002CR  
K
DESCRIPTION  
Dual center tap rectifier suited for Switch Mode  
Power Supplies and High frequency DC to DC  
converters.  
K
A2  
A2  
K
A1  
A1  
D2PAK  
Packaged in TO-220AB, D2PAK, TO-220FPAB  
and I2PAK, this device is intended for use in low  
voltage, high frequency inverters, free wheeling  
and polarity protection applications.  
TO-220FPAB  
STTH2002CFP  
STTH2002CG  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
200  
30  
Unit  
V
VRRM  
IF(RMS) RMS forward current  
A
IF(AV)  
Average forward TO-220AB / I2PAK /  
Tc = 150°C Per diode  
Tc = 140°C Per device  
Tc = 130°C Per diode  
Tc = 115°C Per device  
Tc = 120°C Per diode  
10  
A
current δ =0.5  
D2PAK  
20  
15  
30  
TO-220FPAB  
10  
Tc = 95°C  
Per device  
20  
IFSM  
Tstg  
Tj  
Surge non repetitive forward current  
Storage temperature range  
tp = 10 ms Sinusoidal  
90  
A
- 65 + 175 °C  
175 °C  
Maximum operating junction temperature  
February 2004 - Ed: 1  
1/7  

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