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STTH2003

更新时间： 2024-10-31 22:42:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
8页	135K
描述
HIGH FREQUENCY SECONDARY RECTIFIER

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中文翻译

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数据手册

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STTH2003 数据手册

STTH2003CT/CG/CF/CR/CFP

HIGH FREQUENCY SECONDARY RECTIFIER

MAJOR PRODUCT CHARACTERISTICS

I_F(AV)

2 x 10 A

300 V

175 °C

1 V

V_RRM

Tj (max)

V_F(max)

trr (max)

D²PAK

STTH2003CG

35 ns

FEATURES AND BENEFITS

■

COMBINES HIGHEST RECOVERY AND

REVERSE VOLTAGE PERFORMANCE

ULTRA-FAST, SOFT AND NOISE-FREE

RECOVERY

INSULATED PACKAGES: ISOWATT220AB,

TO-220FPAB

I²PAK

STTH2003CR

TO-220AB

STTH2003CT

Electric insulation: 2000VDC

Capacitance: 12pF

DESCRIPTION

Dual center tap Fast Recovery Epitaxial Diodes

suited for Switch Mode Power Supply and high

frequency DC/DC converters.

ISOWATT220AB

STTH2003CF

TO-220FPAB

STTH2003CFP

Packaged in TO-220AB, ISOWATT220AB,

TO-220FPAB, I²PAK or D²PAK, this device is

especially intended for secondary rectification.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Repetitive peak reverse voltage

Value

Unit

V_RRM

300

I_F(RMS)

I_F(AV)

RMS forward current

Average forward TO-220AB / D²PAK /

Tc=140°C

Per diode

Per device

current δ = 0.5

I²PAK

Tc=125°C

Tc=115°C

ISOWATT220AB

TO-220FPAB

I_FSM

I_RSM

T_stg

110

Surge non repetitive forward current

Non repetitive avalanche current

Storage temperature range

tp = 10 ms sinusoidal

tp = 20 µs square

-65 + 175

175

°C

Maximum operating junction temperature

August 2003 - Ed: 7D

1/8

12 3 4 5 6 7 8

中文翻译

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