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STTH2003CG-TR PDF预览

STTH2003CG-TR

更新时间: 2024-10-31 22:13:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 135K
描述
HIGH FREQUENCY SECONDARY RECTIFIER

STTH2003CG-TR 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-263包装说明:D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.39应用:ULTRA FAST SOFT RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:110 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:300 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

STTH2003CG-TR 数据手册

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®
STTH2003CT/CG/CF/CR/CFP  
HIGH FREQUENCY SECONDARY RECTIFIER  
MAJOR PRODUCT CHARACTERISTICS  
K
A1  
A2  
K
IF(AV)  
2 x 10 A  
300 V  
175 °C  
1 V  
VRRM  
A2  
Tj (max)  
VF (max)  
trr (max)  
A1  
D2PAK  
STTH2003CG  
35 ns  
A2  
FEATURES AND BENEFITS  
K
A1  
COMBINES HIGHEST RECOVERY AND  
REVERSE VOLTAGE PERFORMANCE  
ULTRA-FAST, SOFT AND NOISE-FREE  
RECOVERY  
INSULATED PACKAGES: ISOWATT220AB,  
TO-220FPAB  
I2PAK  
A2  
STTH2003CR  
K
A1  
TO-220AB  
STTH2003CT  
Electric insulation: 2000VDC  
Capacitance: 12pF  
A2  
DESCRIPTION  
K
A1  
Dual center tap Fast Recovery Epitaxial Diodes  
suited for Switch Mode Power Supply and high  
frequency DC/DC converters.  
A2  
ISOWATT220AB  
STTH2003CF  
K
A1  
TO-220FPAB  
STTH2003CFP  
Packaged in TO-220AB, ISOWATT220AB,  
TO-220FPAB, I2PAK or D2PAK, this device is  
especially intended for secondary rectification.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
300  
V
IF(RMS)  
IF(AV)  
30  
A
A
RMS forward current  
Average forward TO-220AB / D2PAK /  
Tc=140°C  
Per diode  
Per device  
10  
20  
current δ = 0.5  
I2PAK  
Tc=125°C  
Tc=115°C  
ISOWATT220AB  
TO-220FPAB  
IFSM  
IRSM  
Tstg  
Tj  
110  
5
A
A
Surge non repetitive forward current  
Non repetitive avalanche current  
Storage temperature range  
tp = 10 ms sinusoidal  
tp = 20 µs square  
-65 + 175  
175  
°C  
°C  
Maximum operating junction temperature  
August 2003 - Ed: 7D  
1/8  

STTH2003CG-TR 替代型号

型号 品牌 替代类型 描述 数据表
STTH2003CG STMICROELECTRONICS

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