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STTH200L04TV1 PDF预览

STTH200L04TV1

更新时间: 2024-11-01 03:02:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管测试局域网
页数 文件大小 规格书
7页 162K
描述
Ultrafast high voltage rectifier

STTH200L04TV1 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:ISOTOP包装说明:ISOTOP, 4 PIN
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:31 weeks风险等级:2.26
Is Samacsys:N应用:GENERAL PURPOSE
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-XUFM-X4JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:900 A
元件数量:2相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:120 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):225
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向电流:1000 µA最大反向恢复时间:0.1 µs
反向测试电压:400 V子类别:Other Diodes
表面贴装:NO端子面层:MATTE TIN
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STTH200L04TV1 数据手册

 浏览型号STTH200L04TV1的Datasheet PDF文件第2页浏览型号STTH200L04TV1的Datasheet PDF文件第3页浏览型号STTH200L04TV1的Datasheet PDF文件第4页浏览型号STTH200L04TV1的Datasheet PDF文件第5页浏览型号STTH200L04TV1的Datasheet PDF文件第6页浏览型号STTH200L04TV1的Datasheet PDF文件第7页 
STTH200L04TV1  
Ultrafast high voltage rectifier  
Mian product characteristics  
IF(AV)  
VRRM  
up to 2 x 120 A  
400 V  
A1  
A2  
K1  
K2  
Tj (max)  
VF (typ)  
trr (max)  
150° C  
K1  
0.83 V  
A1  
50 ns  
K2  
Features and benefits  
A2  
Ultrafast switching  
Low reverse current  
ISOTOP  
STTH200L04TV1  
Low thermal resistance  
Reduces switching and conduction losses  
Package insulation voltage: 2500 V  
RMS  
Description  
Order codes  
The STTH200L04TV1 uses ST 400 V technology  
and is specially suited for use in switching power  
supplies, welding equipment, and industrial  
applications, as an output rectification diode.  
Part number  
STTH200L04TV1  
Marking  
STTH200L04TV1  
Table 1.  
Symbol  
Absolute ratings (limiting values, per diode)  
Parameter  
Value  
Unit  
VRRM  
Repetitive peak reverse voltage  
400  
200  
V
A
IF(RMS) RMS forward current  
Tc = 90° C δ = 0.5  
Per diode  
Per diode  
100  
IF(AV)  
Average forward current  
A
Tc = 73° C δ = 0.5  
120  
IFSM  
Tstg  
Tj  
Surge non repetitive forward current  
Storage temperature range  
tp = 10 ms sinusoidal  
900  
A
-55 to + 150  
150  
° C  
° C  
Maximum operating junction temperature  
August 2006  
Rev 1  
1/7  
www.st.com  
7

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