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STTH2002CG PDF预览

STTH2002CG

更新时间: 2024-11-22 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管功效
页数 文件大小 规格书
7页 97K
描述
HIGH EFFICIENCY ULTRAFAST DIODE

STTH2002CG 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-263包装说明:ROHS COMPLIANT, PLASTIC, D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:7.61Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.89 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:90 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.027 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

STTH2002CG 数据手册

 浏览型号STTH2002CG的Datasheet PDF文件第2页浏览型号STTH2002CG的Datasheet PDF文件第3页浏览型号STTH2002CG的Datasheet PDF文件第4页浏览型号STTH2002CG的Datasheet PDF文件第5页浏览型号STTH2002CG的Datasheet PDF文件第6页浏览型号STTH2002CG的Datasheet PDF文件第7页 
®
STTH2002C  
HIGH EFFICIENCY ULTRAFAST DIODE  
MAIN PRODUCT CHARACTERISTICS  
IF(AV) Up to 2 x 15A  
VRRM  
A1  
A2  
K
200 V  
175 °C  
0.78 V  
22 ns  
Tj (max)  
VF (typ)  
trr (typ)  
FEATURES AND BENEFITS  
A2  
A2  
K
K
Suited for SMPS  
Low losses  
Low forward and reverse recovery times  
Low leakage current  
High junction temperature  
Insulated package: TO-220FPAB  
A1  
A1  
TO-220AB  
I2PAK  
STTH2002CT  
STTH2002CR  
K
DESCRIPTION  
Dual center tap rectifier suited for Switch Mode  
Power Supplies and High frequency DC to DC  
converters.  
K
A2  
A2  
K
A1  
A1  
D2PAK  
Packaged in TO-220AB, D2PAK, TO-220FPAB  
and I2PAK, this device is intended for use in low  
voltage, high frequency inverters, free wheeling  
and polarity protection applications.  
TO-220FPAB  
STTH2002CFP  
STTH2002CG  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
200  
30  
Unit  
V
VRRM  
IF(RMS) RMS forward current  
A
IF(AV)  
Average forward TO-220AB / I2PAK /  
Tc = 150°C Per diode  
Tc = 140°C Per device  
Tc = 130°C Per diode  
Tc = 115°C Per device  
Tc = 120°C Per diode  
10  
A
current δ =0.5  
D2PAK  
20  
15  
30  
TO-220FPAB  
10  
Tc = 95°C  
Per device  
20  
IFSM  
Tstg  
Tj  
Surge non repetitive forward current  
Storage temperature range  
tp = 10 ms Sinusoidal  
90  
A
- 65 + 175 °C  
175 °C  
Maximum operating junction temperature  
February 2004 - Ed: 1  
1/7  

STTH2002CG 替代型号

型号 品牌 替代类型 描述 数据表
STTH2002CG-TR STMICROELECTRONICS

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