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STPS640CB PDF预览

STPS640CB

更新时间: 2024-11-11 22:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管PC
页数 文件大小 规格书
6页 78K
描述
POWER SCHOTTKY RECTIFIER

STPS640CB 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:7.24
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:180459Samacsys Pin Count:4
Samacsys Part Category:Integrated CircuitSamacsys Package Category:TO-XXX (Inc. DPAK)
Samacsys Footprint Name:DPAK (TO-252)_5Samacsys Released Date:2015-07-14 08:30:56
Is Samacsys:N其他特性:FREEWHEELING DIODE
应用:POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.57 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:75 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:40 V最大反向电流:10000 µA
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

STPS640CB 数据手册

 浏览型号STPS640CB的Datasheet PDF文件第2页浏览型号STPS640CB的Datasheet PDF文件第3页浏览型号STPS640CB的Datasheet PDF文件第4页浏览型号STPS640CB的Datasheet PDF文件第5页浏览型号STPS640CB的Datasheet PDF文件第6页 
STPS640CT/CF/CB  
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
A1  
IF(AV)  
VRRM  
2 x 3 A  
40 V  
K
A2  
Tj (max)  
VF (max)  
150 °C  
0.57 V  
K
FEATURESAND BENEFITS  
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLESWITCHING LOSSES  
EXTREMELY FAST SWITCHING  
LOW FORWARD DROP VOLTAGE  
LOW CAPACITANCE  
A2  
A1  
DPAK  
STPS640CB  
LOW THERMAL RESISTANCE  
INSULATEDPACKAGE:  
Insulatingvoltage = 2000V DC  
Capacitance= 12pF  
SMD PACKAGE (tapeand reel option: -TR)  
A2  
DESCRIPTION  
K
A2  
A1  
K
Dual Schottky rectifier suited to Switch Mode  
Power Suppliesand other Power Converters.  
A1  
ISOWATT220AB  
STPS640CF  
This device is intended for use in low and medium  
voltage operation, and particulary, in high fre-  
quency circuitries where low switching losses are  
required (free wheeling and polarity protection).  
TO-220AB  
STPS640CT  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Value  
40  
10  
6
Unit  
VRRM Repetitivepeak reverse voltage  
IF(RMS) RMS forward current  
V
A
TO-220AB/ ISOWATT220AB  
DPAK  
IF(AV) Average forward current δ = 0.5  
TO-220AB  
ISOWATT220AB Tc = 130°C  
DPAK Tc = 120°C  
tp = 10 ms Sinusoidal  
Tc = 135°C  
3
A
IFSM  
IRRM  
Tstg  
Tj  
Surge non repetitive forward current  
Repetitivepeak reverse current  
Storage temperaturerange  
75  
1
A
A
µ
tp = 2 s F = 1kHz square  
- 65 to + 150 °C  
Maximum operatingjunction temperature  
150  
°C  
µ
V/ s  
dV/dt Critical rate of rise of reverse voltage  
10000  
August 1999 - Ed: 4A  
1/6  

STPS640CB 替代型号

型号 品牌 替代类型 描述 数据表
STPS640CB-TR STMICROELECTRONICS

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