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STPS60H100CT PDF预览

STPS60H100CT

更新时间: 2024-11-11 21:56:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管局域网
页数 文件大小 规格书
5页 66K
描述
POWER SCHOTTKY RECTIFIER

STPS60H100CT 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:1.22
Is Samacsys:N应用:POWER
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.72 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:300 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STPS60H100CT 数据手册

 浏览型号STPS60H100CT的Datasheet PDF文件第2页浏览型号STPS60H100CT的Datasheet PDF文件第3页浏览型号STPS60H100CT的Datasheet PDF文件第4页浏览型号STPS60H100CT的Datasheet PDF文件第5页 
STPS60H100C  
®
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
I
2 x 30 A  
100 V  
F(AV)  
A1  
K
V
RRM  
A2  
T
175°C  
0.72 V  
j
V (max)  
F
K
FEATURES AND BENEFITS  
High junction temperature capabiliy  
Low leakage current  
Low thermal resistance  
High frequency operation  
Avalanche specification  
A2  
K
A1  
TO-220AB  
STPS60H100CT  
DESCRIPTION  
Dual center tab Schottky rectifier suited for High  
Frequency server and telecom base station  
SMPS. Packaged in TO-220AB, this device com-  
bines high current rating and low volume to en-  
hance both reliability and power density of the  
application.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
V
100  
V
RRM  
I
RMS forward voltage  
60  
A
A
F(RMS)  
I
Average forward current  
Tc = 150°C  
δ = 0.5  
Per diode  
Per device  
30  
60  
F(AV)  
I
Surge non repetitive forward current  
Repetitive peak avalanche power  
Storage temperature range  
tp = 10ms sinusoidal  
tp = 1µs Tj = 25°C  
300  
18100  
A
W
FSM  
P
ARM  
T
-65 to + 175  
175  
°C  
stg  
T
Maximum operating junction temperature *  
°C  
j
dV/dt Critical rate of rise of reverse voltage  
10000  
V/µs  
dPtot  
* : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink  
dTj Rth(j a)  
1
Order Codes  
Part Number  
Marking  
STPS60H100CT  
STPS60H100CT  
August 2004  
REV. 1  
1/5  

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