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STPS61170CW PDF预览

STPS61170CW

更新时间: 2024-11-01 04:30:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管高压PC局域网高电压电源
页数 文件大小 规格书
5页 90K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS61170CW 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-247AC包装说明:TO-247, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:5.69
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:180457Samacsys Pin Count:3
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-247Samacsys Released Date:2015-11-03 12:30:39
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
应用:HIGH VOLTAGE POWER配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.67 VJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:500 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:170 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS61170CW 数据手册

 浏览型号STPS61170CW的Datasheet PDF文件第2页浏览型号STPS61170CW的Datasheet PDF文件第3页浏览型号STPS61170CW的Datasheet PDF文件第4页浏览型号STPS61170CW的Datasheet PDF文件第5页 
STPS61170C  
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
Table 1: Main Product Characteristics  
IF(AV)  
VRRM  
Tj  
2 x 30 A  
170 V  
A1  
A2  
K
175 °C  
0.67 V  
VF(max)  
FEATURES AND BENEFITS  
High junction temperature capability  
Low leakage current  
Good trade off between leakage current and  
forward voltage drop  
A2  
K
A1  
TO-247  
Low thermal resistance  
High frequency operation  
Avalanche specification  
Table 2: Order Code  
Part Number  
Marking  
STPS61170CW  
DESCRIPTION  
STPS61170CW  
Dual center tab Schottky rectifier suited for High  
Frequency Switch Mode Power Supply.  
Packaged in TO-247, this device is intended for  
use to enhance the reliability of the application.  
Table 3: Absolute Ratings (limiting values, per diode)  
Symbol  
Parameter  
Value  
Unit  
VRRM Repetitive peak reverse voltage  
IF(RMS) RMS forward current  
170  
V
A
A
80  
IF(AV) Average forward current  
Tc = 150 °C  
δ = 0.5  
Surge non repetitive forward current  
PARM Repetitive peak avalanche power  
Per diode  
Per device  
30  
60  
IFSM  
tp = 10 ms sinusoidal  
tp = 1 µs Tj = 25 °C  
500  
31800  
A
W
Tstg  
Tj  
Storage temperature range  
-65 to + 175  
175  
°C  
Maximum operating junction temperature *  
°C  
dV/dt Critical rate of rise of reverse voltage  
10000  
V/µs  
dPtot  
* : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink  
dTj Rth(j a)  
1
September 2005  
REV. 1  
1/5  

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