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STPS60L45CW PDF预览

STPS60L45CW

更新时间: 2024-11-25 22:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管局域网
页数 文件大小 规格书
4页 75K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

STPS60L45CW 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-247AC包装说明:PLASTIC, TO-247, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:2.26
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:POWER外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.73 V
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:600 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:45 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STPS60L45CW 数据手册

 浏览型号STPS60L45CW的Datasheet PDF文件第2页浏览型号STPS60L45CW的Datasheet PDF文件第3页浏览型号STPS60L45CW的Datasheet PDF文件第4页 
®
STPS60L45CW  
LOW DROP POWER SCHOTTKY RECTIFIER  
A1  
MAJOR PRODUCTS CHARACTERISTICS  
K
IF(AV)  
Tj (max)  
VRRM  
2 x 30 A  
150°C  
45 V  
A2  
VF(max)  
0.50 V  
FEATURES AND BENEFITS  
A2  
K
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLE SWITCHING LOSSES  
EXTREMELY FAST SWITCHING  
LOW FORWARD VOLTAGE DROP  
LOW THERMAL RESISTANCE  
A1  
TO-247  
DESCRIPTION  
Dual center tap schottky barrier rectifier suited for  
5V output in off line AC/DC power supplies.  
Packaged in TO-247, this device is intended for  
use in low voltage, high frequency converters, free  
wheeling and polarity protection applications.  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
45  
V
IF(RMS)  
IF(AV)  
50  
A
A
RMS forward current  
30  
60  
Average forward current  
Tc = 135°C  
δ = 0.5  
Per diode  
Per device  
IFSM  
IRRM  
IRSM  
Tstg  
Tj  
600  
A
A
Surge non repetitive forward current  
Repetitive peak reverse current  
Non repetitive peak reverse current  
Storage temperature range  
tp = 10 ms Sinusoidal  
tp = 2 µs square F=1kHz  
tp = 100 µs square  
2
4
A
- 65 to + 150  
150  
°C  
°C  
V/µs  
Maximum operating junction temperature (*)  
Critical rate of rise of reverse voltage  
dV/dt  
dPtot  
10000  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(ja)  
March 1999 - Ed: 2C  
1/4  

STPS60L45CW 替代型号

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